H10D 1/043
Using patterning processes to form electrode extensions
Official title: {using patterning processes to form electrode extensions, e.g. etching}
H10D1/043 (Using patterning processes to form electrode extensions) appears on 755 US grants and 735 published applications in this corpus.
Search patents in H10D- Granted patents
- 755
- Published applications
- 735
- Assignees
- 179
- Inventors
- 1,503
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 4 | 0 |
| 1993 | 7 | 0 |
| 1994 | 4 | 0 |
| 1995 | 14 | 0 |
| 1996 | 13 | 0 |
| 1997 | 8 | 0 |
| 1998 | 25 | 0 |
| 1999 | 23 | 0 |
| 2000 | 33 | 0 |
| 2001 | 36 | 4 |
| 2002 | 18 | 12 |
| 2003 | 13 | 7 |
| 2004 | 6 | 3 |
| 2005 | 4 | 6 |
| 2006 | 7 | 7 |
| 2007 | 5 | 3 |
| 2008 | 3 | 1 |
| 2009 | 3 | 3 |
| 2010 | 1 | 11 |
| 2011 | 9 | 10 |
| 2012 | 6 | 20 |
| 2013 | 15 | 29 |
| 2014 | 29 | 35 |
| 2015 | 31 | 23 |
| 2016 | 28 | 29 |
| 2017 | 24 | 25 |
| 2018 | 28 | 32 |
| 2019 | 42 | 49 |
| 2020 | 43 | 45 |
| 2021 | 40 | 46 |
| 2022 | 45 | 64 |
| 2023 | 39 | 95 |
| 2024 | 60 | 50 |
| 2025 | 62 | 64 |
| 2026 | 27 | 62 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
- Three-dimensional semiconductor structures formed from planar layers150US 5,160,987 AInternational Business Machines Corporation · 1992
- Method of making pillar-type structure on semiconductor substrate119US 6,335,257 B12002
- Method for manufacturing a semiconductor memory device having a capacitor with increased effective area83US 5,447,878 ASamsung Electronics Co., Ltd. · 1995
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- Method for manufacturing capacitor of highly integrated semiconductor memory device72US 5,134,086 ASamsung Electronics Co., Ltd. · 1992