Three-dimensional semiconductor structures formed from planar layers

A semiconductor device comprising:

• a substantially planar substrate including a surface having an orientation parallel to a first plane;
• a plurality of first planar regions of a first material formed in vertical spaced relationship to and above said surface;
• a plurality of second planar regions of conductive material formed above said surface, each second planar region vertically interleaved between adjacent first planar regions;
• a plurality of third planar regions formed laterally adjacent to said second planar regions and vertically between adjacent first planar regions, said third regions being defined substantially by said first material;
• a conductive member at least partially filling said third regions, said conductive member being insulatingly spaced from said first and second planar regions;
• and
• at least one coupling region, passing through at least some of said first regions, said coupling region including at least one conductor.