Method of making pillar-type structure on semiconductor substrate

Abstract

The present invention provides a method in making a pillar-type structure (e.g. a storage node of stack capacitor) on a semiconductor substrate. By depositing a conductive polysilicon electrode layer, a nitride layer and a silicon layer on the substrate, and then required oxide pillars are formed in the silicon layer to act as a mask for etching the conductive polysilicon electrode layer.

Claims aren’t available for this document.