H01J 37/32449
Gas control
Official title: {Gas control, e.g. control of the gas flow}
H01J37/32449 (Gas control) appears on 2,208 US grants and 3,534 published applications in this corpus.
Search patents in H01J- Granted patents
- 2,208
- Published applications
- 3,534
- Assignees
- 529
- Inventors
- 6,029
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 3 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 5 | 0 |
| 1994 | 7 | 0 |
| 1995 | 7 | 0 |
| 1996 | 4 | 0 |
| 1997 | 11 | 0 |
| 1998 | 9 | 0 |
| 1999 | 6 | 0 |
| 2000 | 10 | 0 |
| 2001 | 12 | 4 |
| 2002 | 5 | 20 |
| 2003 | 11 | 14 |
| 2004 | 7 | 11 |
| 2005 | 8 | 34 |
| 2006 | 8 | 40 |
| 2007 | 10 | 49 |
| 2008 | 15 | 55 |
| 2009 | 12 | 80 |
| 2010 | 30 | 79 |
| 2011 | 33 | 89 |
| 2012 | 52 | 77 |
| 2013 | 53 | 67 |
| 2014 | 72 | 101 |
| 2015 | 88 | 176 |
| 2016 | 110 | 161 |
| 2017 | 112 | 160 |
| 2018 | 109 | 177 |
| 2019 | 139 | 219 |
| 2020 | 173 | 218 |
| 2021 | 146 | 233 |
| 2022 | 167 | 283 |
| 2023 | 162 | 327 |
| 2024 | 182 | 294 |
| 2025 | 229 | 306 |
| 2026 | 195 | 260 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Film forming method and film forming apparatus6 Oct 2026US 12,753,485 B2Tokyo Electron Limited
- Flow control arrangements, semiconductor processing systems having flow control arrangements, and flow control methods6 Oct 2026US 12,753,499 B2ASM IP Holding B. V.
- Substrate processing device and method for cleaning substrate processing device6 Oct 2026US 12,753,506 B2Jusung Engineering Co., Ltd.
- Apparatus for conducting plasma surface treatment, board treatment system having the same, and method of manufacturing semiconductor devices using the same6 Oct 2026US 12,755,942 B2New Power Plasma Co., Ltd.
- Methods for reducing photoresist and carbon etch rates in an ICP process chamber using a silicon-based chamber pre-coat6 Oct 2026US 12,757,659 B2APPLIED Materials.Inc.
- Device for reducing a parasitic plasma and a substrate processing apparatus having the same8 Oct 2026US 2026/0311971 A1ASM IP Holding B. V.
- Integration of vapor deposition process into plasma etch reactor8 Oct 2026US 2026/0311972 A1Lam Research Corporation
- Sputtering System with a Plasma Monitoring Device and an Ion Source8 Oct 2026US 2026/0311978 A1Dah Young Vacuum Equipment Co., Ltd.
- Nanosecond pulsing electric field generated microplasmas8 Oct 2026US 2026/0313779 A1New York University
- Low pressure plasma etch process for preferential generation of oxide residue and applications for the same8 Oct 2026US 2026/0314283 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Process feed management for semiconductor substrate processing741US 9,017,481 B1ASM America, Inc. · 2015
- Processing apparatus and method for plasma processing739US 5,134,965 AHitachi, Ltd. · 1992
- Reactor optimized for chemical vapor deposition of titanium647US 6,079,356 AAPPLIED Materials.Inc. · 2000
- Method of and apparatus for tunable gas injection in a plasma processing system582US 6,872,259 B2Tokyo Electron Limited · 2005
- Plasma treatment method and apparatus581US 5,242,539 AHitachi, Ltd. · 1993