Apparatus for conducting plasma surface treatment, board treatment system having the same, and method of manufacturing semiconductor devices using the same

A method of manufacturing a semiconductor device, comprising:

• loading a plurality of package structures to a process chamber having first and second walls spaced apart in a first direction and a supply baffle and a discharge baffle adjacent to the first and the second walls, respectively, the supply and discharge baffles extending in a second direction perpendicular to the first direction, the supply baffle having a plurality of inlet holes and the discharge baffle having a plurality of outlet holes;
• supplying process radicals generated from an exterior plasma generator into the process chamber through the inlet holes to thereby conduct a plasma surface treatment process to surfaces of the package structures with the process radicals;
• and
• discharging the process radicals from the process chamber through the outlet holes,
• wherein the package structures are stacked in a third direction perpendicular to the first and second directions while the plasma surface treatment process is performed,
• wherein a heat exchanger is arranged on a supply duct and configured to cool down a temperature of the process radicals passing through the supply duct,
• wherein a flow controller is configured to control the process radicals to flow out of the process chamber, the flow controller being connected to a discharge duct configured that the process radicals are discharged outside the process chamber through the discharge duct,
• wherein the supply baffle includes a plurality of inlet hole rows within the process chamber, each of the plurality of inlet hole rows including the plurality of the inlet holes arranged in a horizontal direction,
• wherein the discharge baffle includes a plurality of outlet hole rows within the process chamber, each of the plurality of outlet hole rows including the plurality of the outlet holes arranged in the horizontal direction,
• wherein a first inlet hole cover is configured to open and close a corresponding inlet hole row, the first inlet hole cover includes a first cover driver and a first cover bar, and the first cover driver is configured to move the first cover bar,
• wherein a first outlet hole cover is configured to open and close a corresponding outlet hole row, the first outlet hole cover includes a second cover driver and a second cover bar, and the second cover driver is configured to move the second cover bar,
• wherein the first inlet hole cover and the first outlet hole cover are positioned at the same height and configured to be simultaneously operated to simultaneously open or close the corresponding inlet and outlet hole rows,
• wherein a treatment space of the process chamber is defined between the supply baffle and the discharge baffle, and
• wherein each of the plurality of outlet hole rows is positioned at the same height as a corresponding one of the plurality of inlet hole rows for the process radicals to flow uniformly along a height from the supply baffle to the discharge baffle.