Reactor optimized for chemical vapor deposition of titanium

An apparatus for chemical vapor deposition, comprising:

• a reaction chamber;
• a generally circular pedestal included in said chamber for supporting a substrate on a top surface thereof;
• a showerhead assembly including a faceplate disposed in parallel to and above said top surface of said pedestal, including holes therethrough for supplying processing gas to a processing region between said faceplate and said pedestal, and being adapted to receive RF power to excite said processing gas in said processing region into a plasma;
• an electrical isolator disposed between said showerhead assembly and a portion of said reaction chamber on a lateral side of said pedestal;
• and
• an electrically insulating confinement ring supportable on an upper periphery of said pedestal below said isolator by a downwardly projecting ridge portion of said ring and acting to confine said plasma to within said processing region.

An apparatus for chemical vapor deposition, comprising:

• a reaction chamber;
• a pedestal included in said chamber for supporting a substrate on a top surface thereof;
• and
• a showerhead assembly disposed in opposition to said pedestal and including
• a faceplate disposed in parallel to and above said top surface of said pedestal and including holes therethrough for supplying a processing gas to a processing region between said faceplate and said pedestal from a first cavity in back of said faceplate,
• a blocker plate disposed in parallel to and above said faceplate and including holes therethrough for supplying said processing gas from a second cavity in back of said faceplate to said first cavity, and
• a gas port disposed above said first cavity for supplying said processing gas to said second cavity;
• wherein both of said faceplate and said blocker plate are formed of a solid nickel material.

An apparatus for chemical vapor deposition, comprising:

• a reaction chamber;
• a generally circular pedestal included in said chamber for supporting a substrate on a top surface thereof, said pedestal having a disk-shaped upper portion including a resistive heater and a stem supporting said upper portion and extending downwardly in a lower portion of said reaction chamber, said pedestal including a heater;
• a showerhead assembly including a faceplate disposed in parallel to and above said top surface of said pedestal, including holes therethrough for supplying processing gas to a processing region between said faceplate and said disk-shaped upper portion of said pedestal;
• and
• a removable, annularly shaped, thermally insulating member disposed within said lower portion of said reaction chamber and shielding walls of said lower portion of said reaction chamber from a downwardly facing surface of said disk-shaped upper portion of said pedestal.

A method for forming a CVD layer on a substrate, comprising the steps of:

• providing a processing chamber including
• a chamber body,
• a pedestal movably disposed on the chamber body and having a periphery removably supporting a confinement ring member having an upper surface, and
• a chamber lid assembly supported by the chamber body and having an isolator ring member with a lower essentially arcuate surface terminating in a lower isolator ring edge;
• disposing a substrate on said pedestal;
• elevating said pedestal including said substrate until at least a portion of said upper surface of said confinement ring member extends vertically to at least said lower isolator ring edge of said isolator ring member;
• and
• processing said substrate including heating said pedestal to a temperature greater than 600.degree. C. and contacting said substrate with a processing gas to form a CVD layer on said substrate.

A method for forming a CVD layer on a substrate, comprising the steps of:

• providing a processing chamber including
• a chamber body,
• a pedestal movably disposed on the chamber body and having a periphery removably supporting a confinement ring member having an upper surface, and
• a chamber lid assembly supported by the chamber body and having an isolator ring member with a lower essentially arcuate surface terminating in a lower isolator ring edge;
• disposing a substrate on said pedestal;
• elevating said pedestal including said substrate until at least a portion of said upper surface of said confinement ring member extends vertically to at least said lower isolator ring edge of said isolator ring member;
• and
• processing said substrate including contacting said substrate with a processing gas to form a CVD layer on said substrate, wherein said CVD layer consists essentially of titanium.

A method for forming a CVD layer on a substrate, comprising the steps of:

• providing a processing chamber including
• a chamber body,
• a pedestal movably disposed on the chamber body and having a periphery removably supporting a confinement ring member having an upper surface, and
• a chamber lid assembly supported by the chamber body and having an isolator ring member with a lower essentially arcuate surface terminating in a lower isolator ring edge;
• disposing a substrate on said pedestal;
• elevating said pedestal including said substrate until at least a portion of said upper surface of said confinement ring member extends vertically to at least said lower isolator ring edge of said isolator ring member;
• and
• processing said substrate including contacting said substrate with a processing gas comprising TiCl.sub.4 to form a CVD layer comprising titanium on said substrate.