Back to results
US 2026/0311971 A1Published application
Device for reducing a parasitic plasma and a substrate processing apparatus having the same
AssigneeASM IP Holding B.V.
InventorsDaeYoun Kim, JongSu Kim
Life of this patent
Estimating the term…
Abstract
In one embodiment of the present disclosure, a device for reducing a parasitic plasma comprises: a gas manifold; a gas channel; and an insulator located between the gas manifold and the gas channel to isolate the gas channel from the gas manifold electrically, wherein the gas manifold is metallic and grounded to reduce a parasitic plasma within the gas manifold.
Claims14
A device for reducing a parasitic plasma comprising:
- a gas manifold;
- a gas channel;
- and
- an insulator located between the gas manifold and the gas channel to isolate the gas channel from the gas manifold electrically,
- wherein the gas manifold is metallic and grounded to reduce a parasitic plasma within the gas manifold.
2 more elements
A substrate processing apparatus comprising:
- a gas manifold;
- a gas channel;
- an insulator located between the gas manifold and the gas channel to isolate the gas channel from the gas manifold electrically;
- a showerhead supporting the gas channel;
- an exhaust duct supporting the showerhead;
- an outer flow control ring and an inner control ring to control a flow of an exhaust gas from a reaction space;
- a heater, being located facing the showerhead, to heat a substrate loaded thereon;
- and
- a power source coupled to the showerhead,
- wherein the gas manifold is metallic and grounded to reduce a parasitic plasma within the gas manifold, and
- wherein the showerhead, the exhaust duct, and the heater define the reaction space.
8 more elements
The substrate processing apparatus of 8, wherein the insulator comprises at least one of ceramic or celazole.
Dependencies are inferred from the claim text.