Sputtering System with a Plasma Monitoring Device and an Ion Source

A sputtering system with a plasma monitoring device and an ion source, comprising:

• at least one first target holder located in a hollow chamber, the first target holder having a first target material and providing a first plasma;
• at least one second target holder located in a hollow chamber, the second target holder having a second target material and providing a second plasma;
• a first collimator set disposed corresponding to the first target holder to detect a first plasma spectrum of the first plasma;
• a first mass flow controller set supplying gas to the first target holder and the second target holder through a first gas supply tube set and a second gas supply tube set, respectively;
• a plasma emission monitor adjusting a flow rate of the gas provided by the first mass flow controller set according to the first plasma spectrum of the first plasma, wherein the first target material and the second target material are the same, and a total number of collimator sets is less than a total number of target holders, the first target holder corresponds to the independently disposed first gas supply tube set, and the second target holder corresponds to the independently disposed second gas supply tube set, a total number of gas supply tube sets is equal to the total number of target holders, the total number of gas supply tube sets is greater than the total number of collimator sets, and the total number of gas supply tube sets is greater than a total number of mass flow controller sets;
• a deposition target carrier connected to the hollow chamber and configured to carry a deposition target;
• a rotary driver rotatably connected to the deposition target carrier;
• a plasma source connected to the hollow chamber and configured to provide an induced electric field to ionize the gas;
• and
• an ion source device configured to provide an ion beam, wherein the rotary driver has a rotation direction, the ion source device is located on a front side of the rotation direction relative to the plasma source, and the plasma source is located on a rear side of the rotation direction relative to the ion source device.