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US 12,753,485 B2Granted
Film forming method and film forming apparatus
AssigneeTokyo Electron Limited
InventorsKen Okoshi, Yamato Tonegawa, Jun Ogawa
Life of this patent
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Abstract
A film forming method includes performing a process including a) and b) a plurality of times, with a) being performed before b) in the process: a) supplying borazine-based gas to a substrate, thereby adsorbing the borazine-based gas to the substrate and b) exposing the substrate to a nitrogen plasma.
Claims7
A film forming method comprising:
- providing a substrate;
- exposing the substrate to a nitrogen plasma, thereby generating a nitrogen group on the substrate;
- and
- after exposing the substrate to the nitrogen plasma, forming a film on a surface of the substrate, the film including a boron atom and a nitrogen atom,
- wherein the forming of the film on the surface of the substrate includes:
- a) supplying first inert gas to the surface of the substrate, thereby purging the surface of the substrate;
- b) supplying borazine-based gas to the substrate without exposing the substrate to the nitrogen plasma, thereby adsorbing the borazine-based gas to the substrate;
- c) supplying second inert gas to the surface of the substrate, thereby purging the surface of the substrate;
- d) exposing the substrate to the nitrogen plasma without exposing the substrate to the borazine-based gas;
- and
- e) performing a), b), c), and d) in this order multiple times, and
- wherein a) is first performed in each cycle of a), b), c), and d).
9 more elements
A film forming apparatus comprising:
- a process chamber;
- a gas supply configured to supply gas into the process chamber;
- and
- a controller configured to perform:
- providing a substrate;
- exposing the substrate to a nitrogen plasma, thereby generating a nitrogen group on the substrate;
- and
- after exposing the substrate to the nitrogen plasma, forming a film on a surface of the substrate, the film including a boron atom and a nitrogen atom,
- wherein the forming of the film on the surface of the substrate includes, in the process chamber,
- a) supplying first inert gas to the surface of the substrate, thereby purging the surface of the substrate,
- b) supplying borazine-based gas to the substrate without exposing the substrate to the nitrogen plasma, thereby adsorbing the borazine-based gas to the substrate,
- c) supplying second inert gas to the surface of the substrate, thereby purging the surface of the substrate,
- d) exposing the substrate to the nitrogen plasma without exposing the substrate to the borazine-based gas, and
- e) performing a), b), c), and d) in this order multiple times, and
- wherein a) is first performed in each cycle of a), b), c), and d).
12 more elements
Dependencies are inferred from the claim text.