H01J 37/32366
Localised processing
Official title: {Localised processing}
H01J37/32366 (Localised processing) appears on 301 US grants and 403 published applications in this corpus.
Search patents in H01J- Granted patents
- 301
- Published applications
- 403
- Assignees
- 159
- Inventors
- 853
- Latest grant
- 2 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 3 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 0 | 0 |
| 1999 | 2 | 0 |
| 2000 | 1 | 0 |
| 2001 | 2 | 2 |
| 2002 | 6 | 5 |
| 2003 | 3 | 10 |
| 2004 | 4 | 11 |
| 2005 | 5 | 7 |
| 2006 | 4 | 11 |
| 2007 | 8 | 6 |
| 2008 | 3 | 21 |
| 2009 | 6 | 13 |
| 2010 | 7 | 14 |
| 2011 | 5 | 15 |
| 2012 | 16 | 22 |
| 2013 | 13 | 11 |
| 2014 | 12 | 17 |
| 2015 | 19 | 21 |
| 2016 | 17 | 31 |
| 2017 | 15 | 28 |
| 2018 | 12 | 26 |
| 2019 | 24 | 12 |
| 2020 | 24 | 34 |
| 2021 | 16 | 19 |
| 2022 | 14 | 15 |
| 2023 | 20 | 15 |
| 2024 | 10 | 17 |
| 2025 | 10 | 14 |
| 2026 | 10 | 6 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Integrated atmospheric plasma treatment station in processing tool2 Jun 2026US 12,648,418 B2Lam Research Corporation
- Frame mask for singulating wafers by plasma etching12 May 2026US 12,628,597 B2UTAC Headquarters Pte. Ltd.
- Atmospheric pressure plasma reduction of copper oxide to copper metal5 May 2026US 12,617,146 B1Surfx Technologies LLC
- Apparatus for treating substrate and method for aligning dielectric plate using the same5 May 2026US 12,620,560 B2Psk Inc.
- Multicell or multiarray plasma and method for surface treatment using the same14 Apr 2026US 12,603,250 B2Institut SystèMes Industriels, Haute Ecole De Suisse Occidentale, Valais-Wallis (Hes-So)
- Trench Tip Squaring in Self-Aligned Multi-Patterning Process13 Aug 2026US 2026/0239945 A1APPLIED Materials.Inc.
- Reactor design optimization with dc bias pulsing to pedestal30 Jul 2026US 2026/0221397 A1Lam Research Corporation
- Dry etching device and method21 May 2026US 2026/0142133 A1Beijing Goldenpower Electronic Technology Co., Ltd.
- Plasma Processing Apparatus and Plasma Processing Method7 May 2026US 2026/0128259 A1Tokyo Electron Limited
- Method of etching a substrate26 Mar 2026US 2026/0086275 A1
Most cited
By later US patents
- Selective titanium nitride etch541US 9,275,834 B1APPLIED Materials.Inc. · 2016
- Method for reducing particle generation at bevel portion of substrate468US 9,343,343 B2ASM IP Holding B. V. · 2016
- Bevel etcher with gap control345US 7,858,898 B2Lam Research Corporation · 2010
- Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films324US 5,290,382 AHughes Aircraft Company · 1994
- Anisotropic gap etch129US 9,502,258 B2APPLIED Materials.Inc. · 2016