Bevel etcher with gap control

A bevel etcher for plasma cleaning a semiconductor substrate, comprising:

• a chamber having an interior in which a bevel edge of a semiconductor is plasma cleaned;
• a lower electrode assembly having a top surface and adapted to support a substrate having a bevel edge;
• an upper electrode assembly including a bottom surface that opposes and is in a spaced-apart relationship with the top surface to form a gap for receiving the substrate therein, the lower and upper electrode assemblies being operative to generate plasma for cleaning the bevel edge during operation;
• and
• at least one mechanism supporting the upper electrode assembly, the lower electrode assembly, or both the upper electrode assembly and the lower electrode assembly and adapted to adjust the tilt angle, the horizontal translation, or both the tilt angle and the horizontal translation of the bottom surface relative to top surface;
• wherein:
• (a) the lower electrode assembly includes an electrostatic chuck to clamp the substrate in place during operation and a support upon which the electrostatic chuck is disposed or (b) the etcher further comprises a chamber wall partially surrounding the lower and upper electrode assemblies, and metal bellows secured to the chamber wall and the mechanism and operative to form a vacuum seal therebetween while allowing the mechanism to move vertically relative to the chamber wall.