Plasma Processing Apparatus and Plasma Processing Method
AssigneeTokyo Electron Limited
InventorsKoji KOTANI, Ikki KON
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AssigneeTokyo Electron Limited
InventorsKoji KOTANI, Ikki KON
Estimating the term…
Provided is a plasma processing apparatus for removing a film formed on a peripheral edge of a substrate using plasma, comprising: a processing chamber configured to be depressurized and accommodating the substrate; a substrate support located in the processing chamber and configured to support the substrate; an injection head located above the substrate support and configured to inject a gas toward the substrate supported by the substrate support; a plasma supply mechanism configured to supply plasma to the peripheral edge of the substrate supported by the substrate support; and one or more partition plates that divide a space between the substrate supported by the substrate support and the injection head into a plurality of regions along a circumferential direction of the substrate, wherein the injection head injects the gas with an adjusted flow rate for each of the regions.
A plasma processing apparatus for removing a film formed on a peripheral edge of a substrate using plasma, comprising:
A plasma processing method for removing a film formed on a peripheral edge of a substrate using plasma, comprising:
Dependencies are inferred from the claim text.