H01J 2237/3343
Problems associated with etching
H01J2237/3343 (Problems associated with etching) appears on 430 US grants and 531 published applications in this corpus.
Search patents in H01J- Granted patents
- 430
- Published applications
- 531
- Assignees
- 136
- Inventors
- 1,361
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 5 | 0 |
| 1990 | 2 | 0 |
| 1991 | 0 | 0 |
| 1992 | 3 | 0 |
| 1993 | 5 | 0 |
| 1994 | 9 | 0 |
| 1995 | 12 | 0 |
| 1996 | 6 | 0 |
| 1997 | 5 | 0 |
| 1998 | 13 | 0 |
| 1999 | 11 | 0 |
| 2000 | 17 | 0 |
| 2001 | 10 | 6 |
| 2002 | 9 | 9 |
| 2003 | 7 | 4 |
| 2004 | 6 | 9 |
| 2005 | 3 | 4 |
| 2006 | 6 | 4 |
| 2007 | 0 | 8 |
| 2008 | 1 | 3 |
| 2009 | 4 | 5 |
| 2010 | 6 | 6 |
| 2011 | 1 | 8 |
| 2012 | 2 | 8 |
| 2013 | 5 | 8 |
| 2014 | 14 | 17 |
| 2015 | 10 | 25 |
| 2016 | 11 | 19 |
| 2017 | 17 | 21 |
| 2018 | 13 | 24 |
| 2019 | 20 | 32 |
| 2020 | 30 | 38 |
| 2021 | 20 | 26 |
| 2022 | 20 | 27 |
| 2023 | 16 | 58 |
| 2024 | 20 | 54 |
| 2025 | 46 | 64 |
| 2026 | 38 | 44 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Process control for ion energy delivery using multiple generators and phase control6 Oct 2026US 12,755,935 B2Lam Research Corporation
- Advanced OES characterization29 Sep 2026US 12,749,664 B2Tokyo Electron Limited
- Plasma processing system, assistance device, assistance method, and assistance program8 Sep 2026US 12,731,763 B2Tokyo Electron Limited
- Impedance matching circuit, power supply apparatus, and plasma processing equipment including same18 Aug 2026US 12,712,153 B2Semes Co., Ltd.
- Substrate processing apparatus18 Aug 2026US 12,712,156 B2Samsung Electronics Co., Ltd.
- Methods and systems for dry etching8 Oct 2026US 2026/0314324 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multiple-chamber reactor for selective deposition of silicon nitride and method of using same1 Oct 2026US 2026/0297752 A1ASM IP Holding B. V.
- Voltage waveform controlling method, substrate processing method, and substrate processing apparatus17 Sep 2026US 2026/0279728 A1Samsung Electronics Co., Ltd.
- Pulsing Remote Plasma For Ion Damage Reduction And Etch Uniformity Improvement17 Sep 2026US 2026/0279732 A1Lam Research Corporation
- Electrostatic chuck and substrate fixing device17 Sep 2026US 2026/0282833 A1Shinko Electric Industries Co., Ltd.
Most cited
By later US patents
- Plasma treatment method and apparatus581US 5,242,539 AHitachi, Ltd. · 1993
- Vacuum processing chamber having multi-mode access485US 6,095,083 AApplied Materiels, Inc. · 2000
- Symmetric plasma process chamber389US 9,741,546 B2APPLIED Materials.Inc. · 2017
- Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches381US 10,529,554 B2ASM IP Holding B. V. · 2020
- Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD320US 6,335,288 B12002