H01J 2237/3346
Selectivity
H01J2237/3346 (Selectivity) appears on 78 US grants and 102 published applications in this corpus.
Search patents in H01J- Granted patents
- 78
- Published applications
- 102
- Assignees
- 38
- Inventors
- 328
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 4 | 0 |
| 1999 | 5 | 0 |
| 2000 | 10 | 0 |
| 2001 | 4 | 2 |
| 2002 | 5 | 5 |
| 2003 | 3 | 0 |
| 2004 | 3 | 1 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 0 | 0 |
| 2010 | 0 | 1 |
| 2011 | 0 | 1 |
| 2012 | 0 | 0 |
| 2013 | 1 | 1 |
| 2014 | 2 | 1 |
| 2015 | 1 | 4 |
| 2016 | 0 | 1 |
| 2017 | 2 | 1 |
| 2018 | 0 | 0 |
| 2019 | 2 | 3 |
| 2020 | 2 | 2 |
| 2021 | 0 | 1 |
| 2022 | 4 | 4 |
| 2023 | 2 | 9 |
| 2024 | 0 | 21 |
| 2025 | 13 | 24 |
| 2026 | 10 | 19 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Plasma processing method and plasma processing apparatus11 Aug 2026US 12,706,286 B2Hitachi High-Tech Corporation
- Voltage waveform controlling method, substrate processing method, and substrate processing apparatus28 Jul 2026US 12,695,057 B2Samsung Electronics Co., Ltd.
- Plasma processing method and plasma processing apparatus28 Jul 2026US 12,695,063 B2Tokyo Electron Limited
- Multiple-chamber reactor for selective deposition of silicon nitride and method of using same14 Jul 2026US 12,680,168 B2ASM IP Holding B. V.
- Plasma processing method and plasma processing device2 Jun 2026US 12,646,692 B2Hitachi High-Tech Corporation
- Multiple-chamber reactor for selective deposition of silicon nitride and method of using same1 Oct 2026US 2026/0297752 A1ASM IP Holding B. V.
- Voltage waveform controlling method, substrate processing method, and substrate processing apparatus17 Sep 2026US 2026/0279728 A1Samsung Electronics Co., Ltd.
- Selective in-situ carbon-based mask protection13 Aug 2026US 2026/0239933 A1Tokyo Electron Limited
- Anisotropic aluminium etching6 Aug 2026US 2026/0231705 A1Nederlandse Organisatie voor toegepast-natuurwetenschappelijk onderzoek TNO
- Etching method and plasma processing apparatus2 Jul 2026US 2026/0190888 A1Tokyo Electron Limited
Most cited
By later US patents
- Vacuum processing chamber having multi-mode access485US 6,095,083 AApplied Materiels, Inc. · 2000
- Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners190US 6,074,512 AAPPLIED Materials.Inc. · 2000
- Plasma reactor having an inductive antenna coupling power through a parallel plate electrode176US 6,077,384 AAPPLIED Materials.Inc. · 2000
- Selectivity for etching an oxide over a nitride141US 5,423,945 AAPPLIED Materials.Inc. · 1995
- Etch suppression with germanium130US 9,576,809 B2APPLIED Materials.Inc. · 2017