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US 12,695,063 B2Granted
Plasma processing method and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsTakayuki Katsunuma, Masanobu Honda
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Abstract
A substrate processing method includes preparing a substrate. The substrate includes a first region and a second region providing an opening on the first region. The substrate processing method further includes forming a top deposit on a top of the second region by using a first plasma generated from a first gas. The substrate processing method further includes forming a first film on a surface of the top deposit and a sidewall surface defining the opening, the first film having a thickness decreasing along a depth direction of the opening.
Claims12
A substrate processing method comprising:
- (a) preparing a substrate including a first region and a second region formed on the first region, the second region providing an opening on the first region;
- (b) forming a top deposit on a top of the second region, by using a plasma generated from a gas;
- (c) forming a first film on a surface of the top deposit and a sidewall surface defining the opening, the first film having a thickness decreasing along a depth direction of the opening;
- and
- (d) after (c), adsorbing a precursor onto the substrate and modifying the precursor on the substrate, thereby forming a second film on the substrate.
2 more elements
Dependencies are inferred from the claim text.