H01J 2237/3347
Bottom of holes or trenches
Official title: bottom of holes or trenches
H01J2237/3347 (Bottom of holes or trenches) appears on 74 US grants and 68 published applications in this corpus.
Search patents in H01J- Granted patents
- 74
- Published applications
- 68
- Assignees
- 35
- Inventors
- 301
- Latest grant
- 4 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 3 | 0 |
| 1996 | 3 | 0 |
| 1997 | 2 | 0 |
| 1998 | 3 | 0 |
| 1999 | 2 | 0 |
| 2000 | 0 | 0 |
| 2001 | 2 | 0 |
| 2002 | 2 | 2 |
| 2003 | 2 | 2 |
| 2004 | 2 | 5 |
| 2005 | 1 | 1 |
| 2006 | 4 | 2 |
| 2007 | 0 | 7 |
| 2008 | 0 | 1 |
| 2009 | 3 | 0 |
| 2010 | 4 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 2 |
| 2013 | 1 | 0 |
| 2014 | 1 | 2 |
| 2015 | 2 | 5 |
| 2016 | 1 | 0 |
| 2017 | 2 | 5 |
| 2018 | 1 | 7 |
| 2019 | 6 | 10 |
| 2020 | 10 | 4 |
| 2021 | 2 | 1 |
| 2022 | 2 | 4 |
| 2023 | 4 | 1 |
| 2024 | 1 | 2 |
| 2025 | 4 | 5 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Multi-state RF pulsing in cycling recipes to reduce charging induced defects4 Aug 2026US 12,700,567 B2Lam Research Corporation
- Plasma processing method21 Oct 2025US 12,451,364 B2Hitachi High-Tech Corporation
- Plasma processing equipment7 Oct 2025US 12,437,969 B2Samsung Electronics Co., Ltd.
- Baffle plate for controlling wafer uniformity and methods for making the same9 Sep 2025US 12,412,734 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Carbon based depositions used for critical dimension control during high aspect ratio feature etches and for forming protective layers11 Mar 2025US 12,249,514 B2Lam Research Corporation
- Baffle plate for controlling wafer uniformity and methods for making the same6 Nov 2025US 2025/0343033 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Plasma processing apparatus and power supply system17 Jul 2025US 2025/0232954 A1Tokyo Electron Limited
- Carbon based depositions used for critical dimension control during high aspect ratio feature etches and for forming protective layers12 Jun 2025US 2025/0191926 A1Lam Research Corporation
- Method to control etch profile by rf pulsing20 Mar 2025US 2025/0095964 A1Lam Research Corporation
- Plasma processing method6 Feb 2025US 2025/0046620 A1Hitachi High-Tech Corporation
Most cited
By later US patents
- Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches381US 10,529,554 B2ASM IP Holding B. V. · 2020
- Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD320US 6,335,288 B12002
- Dry etch process181US 8,765,574 B2APPLIED Materials.Inc. · 2014
- Selectivity for etching an oxide over a nitride141US 5,423,945 AAPPLIED Materials.Inc. · 1995
- Plasma etching system96US 5,423,936 AHitachi, Ltd. · 1995