Plasma processing equipment

Plasma processing equipment comprising:

• a chuck stage having an upper surface dedicated to support a substrate thereon;
• a lower electrode disposed under the chuck stage;
• an upper electrode disposed over the chuck stage;
• an AC power supply configured to produce a first signal, a second signal and a third signal of respective frequencies different from each other and operatively connected to the upper electrode or the lower electrode;
• a dielectric ring extending around the chuck stage;
• an edge electrode located inside the dielectric ring;
• a resonance circuit connected to the edge electrode and configured to selectively allow only the third signal among the first, second and third signals to pass;
• a first cooling channel with a first inlet and a first outlet containing a first refrigerant;
• a second cooling channel with a second inlet and a second outlet containing a second refrigerant,
• wherein the first cooling channel and the second cooling channel are thermally coupled to the dielectric ring and the edge electrode, and wherein the first cooling channel and the second cooling channel are configured to independently circulate the first refrigerant and the second refrigerant, respectively;
• and
• a cooling thermal pad including an upper surface and a lower surface opposite the upper surface,
• the upper cooling channel and the second cooling channel on the upper surface of the cooling thermal pad, and the lower surface of the cooling thermal pad on the dielectric ring.

Plasma processing equipment comprising:

• a chuck stage having an upper surface dedicated to support a substrate thereon;
• a lower electrode disposed under the chuck stage;
• an upper electrode disposed over the chuck stage;
• an AC power supply configured to produce a first signal, a second signal and a third signal of respective frequencies different from each other and operatively connected to the upper electrode or the lower electrode;
• a dielectric ring extending around the chuck stage;
• an edge electrode located inside the dielectric ring;
• a resonance circuit connected to the edge electrode and configured to selectively allow only the third signal among the first, second and third signals to pass;
• a first cooling channel with a first inlet and a first outlet containing a first refrigerant over an upper surface of the dielectric ring;
• a second cooling channel with a second inlet and a second outlet containing a second refrigerant over the upper surface of the dielectric ring, wherein the first cooling channel and the second cooling channel are configured to independently circulate the first refrigerant and the second refrigerant, respectively;
• and
• a cooling thermal pad between the upper surface of the dielectric ring and the first and second cooling channels, and that thermally couples the first and second cooling channels to the dielectric ring.