US 6,335,288 B1 · Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD

Abstract

A method and apparatus are disclosed for depositing a dielectric film in a gap having an aspect ratio at least as large as 6:1. By cycling the gas chemistry of a high-density-plasma chemical-vapor-deposition system between deposition and etching conditions, the gap may be substantially 100% filled. Such filling is achieved by adjusting the flow rates of the precursor gases such that the deposition to sputtering ratio during the deposition phases is within certain predetermined limits.

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Facts

Application

09/648,395Filed 24 Aug 2000

Granted

1 Jan 2002

Term ends

Not estimatedThe source records don’t support an estimate.

Classification19 codes

C23C 16/45523
Characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber: pulsed gas flow or…
C23C 16/045
Coating on selected surface areas, e.g. using masks: coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
C23C 16/4405
Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber: cleaning of reactor or parts inside the reactor by…
C23C 16/463
Characterised by the method used for heating the substrate: cooling of the substrate

Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD

Life of this patent

Abstract

Claims0

Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD

Life of this patent

Abstract

Claims0