Plasma processing method

Abstract

A plasma processing method for uniformly removing a processing target film in a lateral direction even when a depth of a trench is increased, in particular, a method for plasma-etching a tungsten film of a stacked film formed by alternately stacking an insulating film and the tungsten film. The method includes: a first depositing step of depositing a film; a first etching step of etching after the first depositing step; a second depositing step of depositing a film; a second etching step of etching using a mixed gas after the second depositing step; and a third etching step of etching after the second etching step, the second depositing step being performed after the first depositing step and the first etching step are repeated a predetermined number of times, and the second depositing step, the second etching step, and the third etching step are repeated a predetermined number of times.

Dependencies are inferred from the claim text.