US 12,712,156 B2Granted

Substrate processing apparatus

AssigneeSamsung Electronics Co., Ltd.

InventorsJungmin Ko, Sangki Nam, Dougyong Sung, Byeongsang Kim, Yunhwan Kim, Suyoung Yoo, Namkyun Kim, Kuihyun Yoon

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Abstract

A substrate processing apparatus includes a process chamber having an internal space; upper and lower electrode portions facing each other in the internal space; and a gas supply unit configured to supply cooling gas to a bottom surface of a substrate seated on the lower electrode portion. The gas supply unit may include a gas supply source outside the process chamber and configured to provide a cooling gas, and a gas filter connected to the gas supply source and including one or more wall surfaces at least partially defining a gas flow path for the cooling gas. The gas filter may include a first and second regions formed of respective materials having different dielectric constants. The first and second regions may be configured so that the cooling gas flowing along the gas flow path flows upwardly concurrently with colliding with a wall surface of the gas flow path.

Claims20

Dependent claims

A substrate processing apparatus, comprising:

a process chamber having one or more inner surfaces at least partially defining an internal space;
an upper electrode portion in an upper end portion of the internal space of the process chamber;
a lower electrode portion in the internal space of the process chamber to face the upper electrode portion;
and
a gas supply unit configured to supply cooling gas to a bottom surface of a substrate that is seated on the lower electrode portion,
wherein the gas supply unit includes,
a gas supply source outside the process chamber and configured to provide a cooling gas;
and
a gas filter connected to the gas supply source and configured to guide the cooling gas that is provided by the gas supply source into the process chamber,
wherein the gas filter includes one or more wall surfaces at least partially defining a gas flow path for the cooling gas,
wherein the gas filter includes a first region including a first material and a second region including a second material, the first region and the second region including different materials, the first region being on the second region, the first region and the second region having a same inclination angle greater than 0 with respect to a horizontal direction, and the first material and the second material having different respective dielectric constants,
wherein the first region and the second region are configured to cause the cooling gas flowing through the gas flow path to flow upwardly concurrently with colliding with the one or more wall surfaces at least partially defining the gas flow path.

9 more elements

A substrate processing apparatus, comprising:

a process chamber having one or more inner surfaces at least partially defining an internal space;
an upper electrode portion in an upper end portion of the internal space of the process chamber;
a lower electrode portion in the internal space of the process chamber to face the upper electrode portion;
and
a gas supply unit configured to supply cooling gas to a bottom surface of a substrate seated on the lower electrode portion,
wherein the gas supply unit includes a gas filter connected to a gas supply source and configured to guide the cooling gas that is provided by the gas supply source into the process chamber, and
wherein the gas filter includes a first region including a first material and a second region including a second material, the first region and the second region including different materials, the first region being on the second region, the first region and the second region having a same inclination angle greater than 0 with respect to a horizontal direction, and the first material and the second material having different respective dielectric constants.

4 more elements

A substrate processing apparatus, comprising:

a process chamber having one or more inner surfaces at least partially defining an internal space;
an upper electrode portion in an upper end portion of the internal space of the process chamber;
a lower electrode portion in the internal space of the process chamber to face the upper electrode portion;
and
a gas supply unit configured to supply cooling gas to a bottom surface of a substrate seated on the lower electrode portion,
wherein the gas supply unit includes a gas filter configured to guide the cooling gas into the process chamber,
wherein the gas filter includes a plurality of first regions including a first material and a plurality of second regions including a second material, the first material and the second material having different respective dielectric constants,
wherein the plurality of first regions and the plurality of second regions are alternately arranged, at least one first region of the plurality of first regions and at least one second region of the plurality of second regions have an inclination angle greater than 0 with respect to a horizontal direction.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/068,778Filed 20 Dec 2022
Priority: KR 10-2022-00422725 Apr 2022
Published: US 2023/0317418 A15 Oct 2023
Granted: 18 Aug 2026
Term ends: Not estimatedThe source records don’t support an estimate.

Classification5 codes

H01J 37/3244
Constructional details of the reactor: gas supply means
H01J 37/32568
Electrodes: relative arrangement or disposition of electrodes; moving means
H01J 2237/2001
Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated: maintaining constant desired temperature
H01J 2237/3343
Etching: problems associated with etching