G11C 13/004
Reading or sensing circuits or methods
Official title: {Reading or sensing circuits or methods}
G11C13/004 (Reading or sensing circuits or methods) appears on 4,272 US grants and 4,582 published applications in this corpus.
Search patents in G11C- Granted patents
- 4,272
- Published applications
- 4,582
- Assignees
- 478
- Inventors
- 3,875
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 2 | 0 |
| 2001 | 1 | 0 |
| 2002 | 2 | 2 |
| 2003 | 10 | 21 |
| 2004 | 21 | 34 |
| 2005 | 32 | 62 |
| 2006 | 39 | 56 |
| 2007 | 44 | 56 |
| 2008 | 51 | 99 |
| 2009 | 54 | 97 |
| 2010 | 87 | 120 |
| 2011 | 112 | 141 |
| 2012 | 118 | 141 |
| 2013 | 143 | 169 |
| 2014 | 205 | 293 |
| 2015 | 254 | 252 |
| 2016 | 346 | 305 |
| 2017 | 340 | 284 |
| 2018 | 291 | 291 |
| 2019 | 332 | 353 |
| 2020 | 382 | 347 |
| 2021 | 332 | 335 |
| 2022 | 287 | 319 |
| 2023 | 240 | 240 |
| 2024 | 244 | 233 |
| 2025 | 195 | 173 |
| 2026 | 105 | 159 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- G11C 2013/0054Read is performed on a reference elementIndexing code1,044
- G11C 2013/0045Read using current through the cellIndexing code589
- G11C 2013/0042Read using differential sensingIndexing code261
- G11C 2013/0057Read done in two stepsIndexing code249
- G11C 2013/005Read using potential difference applied between cell electrodesIndexing code188
- G11C 2013/0052Read process characterized by the shapeIndexing code171
- G11C 2013/0047Read destroying or disturbing the dataIndexing code61
Recent patents
- Semiconductor device including ferroelectric memory cell with doped ferroelectric layer6 Oct 2026US 12,755,782 B2SK Hyinx Inc.
- System and method applied with computing-in-memory6 Oct 2026US 12,755,783 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Memory devices for implementing read operation of bidirectional selector only memory (SOM) cells6 Oct 2026US 12,755,784 B2Samsung Electronics Co., Ltd.
- Storage device and method of controlling storage device6 Oct 2026US 12,755,785 B2Kioxia Corporation
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Method and Apparatus for Computing Operations on a Non-volatile Memory Device8 Oct 2026US 2026/0311756 A1Singapore University of Technology and Design
- In-memory computation device having an analog compensation and method8 Oct 2026US 2026/0311757 A1STMicroelectronics International N. V.
- Random code generator, fabricating method thereof and device applying the same8 Oct 2026US 2026/0311758 A1United Microelectronics Corp.
- Segmented reference for tracking column loading8 Oct 2026US 2026/0311759 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Logic drive using standard commodity programmable logic ic chips comprising non-volatile random access memory cells1 Oct 2026US 2026/0303097 A1iCometrue Company Ltd.
Most cited
By later US patents
- Universal memory element and method of programming same436US 5,912,839 AEnergy Conversion Devices, Inc. · 1999
- Programmable resistive device and memory using diode as selector332US 9,818,478 B2Attopsemi Technology Co., LTD · 2017
- Universal memory element with systems employing same and apparatus and method for reading, writing and programming same321US 6,141,241 AEnergy Conversion Devices, Inc. · 2000
- Programmable resistance memory arrays with reference cells317US 6,314,014 B1Ovonyx, Inc. · 2001
- Planar capacitor memory cell and its applications311US 7,209,384 B12007