G11C 2013/0042
Read using differential sensing
Official title: {Read using differential sensing, e.g. bit line [BL] and bit line bar [BLB]}
G11C2013/0042 (Read using differential sensing) appears on 261 US grants and 256 published applications in this corpus.
Search patents in G11C- Granted patents
- 261
- Published applications
- 256
- Assignees
- 82
- Inventors
- 431
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2003 | 0 | 2 |
| 2004 | 2 | 2 |
| 2005 | 2 | 5 |
| 2006 | 4 | 8 |
| 2007 | 3 | 7 |
| 2008 | 7 | 7 |
| 2009 | 2 | 3 |
| 2010 | 11 | 11 |
| 2011 | 5 | 5 |
| 2012 | 3 | 6 |
| 2013 | 10 | 9 |
| 2014 | 15 | 18 |
| 2015 | 18 | 18 |
| 2016 | 19 | 11 |
| 2017 | 20 | 17 |
| 2018 | 22 | 26 |
| 2019 | 31 | 22 |
| 2020 | 30 | 19 |
| 2021 | 11 | 15 |
| 2022 | 14 | 13 |
| 2023 | 13 | 9 |
| 2024 | 7 | 11 |
| 2025 | 8 | 6 |
| 2026 | 4 | 6 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Differential subthreshold read of memory cell pair in a memory device22 Sep 2026US 12,744,083 B2Micron Technology, Inc.
- Memory device architecture using multiple physical cells per bit to improve read margin and to alleviate the need for managing demarcation read voltages4 Aug 2026US 12,700,448 B2Micron Technology, Inc.
- Read/write switching circuit and memory21 Jul 2026US 12,687,984 B2Changxin Memory Technologies, Inc.
- Electronic circuit with RRAM cells13 Jan 2026US 12,525,289 B2Centre National De La Recherche Scientifique
- Current sensing circuit using proportional current mirrors2 Dec 2025US 12,488,841 B2Winbond Electronics Corp.
- Ultra-large scale in-memory computing core circuit for resolving ir-drop issues23 Jul 2026US 2026/0212925 A1Huazhong University of Science and Technology
- Resistive random access memory cell array18 Jun 2026US 2026/0171149 A1Silicon Storage Technology, Inc.
- Resistive random access memory cell array11 Jun 2026US 2026/0162718 A1Silicon Storage Technology, Inc.
- Memory circuits with sense amplifiers selectively coupled to access lines and methods for operating the same14 May 2026US 2026/0134914 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Hybrid computing-in-memory (cim) device and a method for sensing multi-level data bit with the same30 Apr 2026US 2026/0120764 A1The Hong Kong University of Science and Technology
Most cited
By later US patents
- Resistance change memory device having a variable resistance element with a recording layer electrode served as a cation source in a write or erase mode89US 7,394,680 B2Kabushiki Kaisha Toshiba · 2008
- Non-volatile memory and method for programming and reading a memory array having the same71US 9,935,113 B2eMemory Technology Inc. · 2018
- Resistance change memory device having a variable resistance element formed of a first and second composite compound for storing a cation70US 7,400,522 B2Kabushiki Kaisha Toshiba · 2008
- System and method to trim reference levels in a resistive memory52US 9,455,013 B2QUALCOMM Incorporated · 2016
- Complementary bit resistance memory sensor and method of operation50US 7,002,833 B2Micron Technology, Inc. · 2006