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US 7,002,833 B2Granted
Complementary bit resistance memory sensor and method of operation
AssigneeMicron Technology, Inc.
InventorsGlen Hush, Jake Baker
Life of this patent
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Abstract
A method and apparatus are disclosed for sensing the resistance state of a resistance-based memory element using complementary resistance-based elements, one holding the resistance state being sensed and the other holding a complementary resistance state. A sense amplifier detects voltages discharging through the high and low resistance elements to determine the resistance state of an element being read.
Claims32
A programmable resistance memory device, comprising:
- a first and second digit line;
- first and second programmable resistance memory elements associated with a single memory cell for respectively storing complementary binary digit values of a data bit as different resistance values;
- first and second access devices for respectively coupling said first and second memory elements to said first and second digit lines;
- and
- a sense amplifier having inputs respectively coupled to said first and second digit lines for reading said data bit stored as a resistance value in one of said memory elements.
2 more elements
A memory device comprising:
- a plurality of pairs of first and second programmable resistance memory cells, each pair of memory cells comprising:
- first and second programmable resistance memory elements associated with a single memory cell for respectively storing complementary binary digit values of a data bit as different resistance values;
- first and second access devices for respectively coupling said first and second memory elements to first and second digit lines;
- and
- a sense amplifier having inputs respectively coupled to said first and second digit lines for reading said data bit stored as a resistance value in one of said memory elements.
2 more elements
A computer system comprising:
- a processor;
- a memory system coupled to said processor, said memory system comprising:
- a first and second digit line;
- first and second programmable resistance memory elements associated with a single memory cell for respectively storing complementary binary digit values of a data bit as different resistance values;
- first and second access devices for respectively coupling said first and second programmable resistance memory elements to said first and second digit lines;
- and
- a sense amplifier having inputs respectively coupled to said first and second digit lines for reading said data bit stored as a resistance value in one of said memory elements.
4 more elements
Dependencies are inferred from the claim text.