Read/write switching circuit and memory

A read/write switching circuit, comprising:

• a first data line connected to a bit line through a column select module, a first complementary data line connected to a complementary bit line through the column select module, and a second data line, and further comprising:
• a read/write switching module configured to transmit data between the first data line and the second data line during read operation in response to a read control signal, or during write operation in response to a write control signal;
• and
• an amplification module connected between the first data line and the first complementary data line and configured to amplify data of the first data line and data of the first complementary data line;
• wherein the read/write switching module comprises:
• a read unit configured to transmit the data of the first data line to the second data line in response to the read control signal;
• and a write unit configured to transmit data of the second data line to the first data line in response to the write control signal;
• and
• wherein the write unit comprises:
• a first n-channel metal-oxide semiconductor (NMOS) transistor, a second NMOS transistor and a third NMOS transistor;
• and a gate of the third NMOS transistor receives the write control signal, the third NMOS transistor is electrically connected to the first data line and the second data line, a drain of the second NMOS transistor is electrically connected to the first complementary data line, and a source of the second NMOS transistor is electrically connected to a drain of the first NMOS transistor.