Electronic circuit with RRAM cells

An electronic circuit suitable for implementing computation operations each providing a binary output, the circuit comprising:

• word lines;
• pairs of complementary bit lines;
• source lines;
• a set of memory cells organized in a matrix including rows and columns, the memory cells of a same row being selectable by at least one word line, the memory cells of a same column being linked to a pair of complementary bit lines and at least one source line;
• each memory cell having at least one pair of memristors and at least one pair of switches, each memristor of a respective memory cell being connected to a respective switch and linked to a same source line during each computation operation, each pair of memristors correspondingly storing a binary value presenting, correspondingly, first and second different resistance values;
• the switches being linked, for activation, to a respective word line and correspondingly linked to a pair of complementary bit lines, the two switches of a respective pair being linked to a same word line;
• a reading module implemented during each computation operation, the reading module including:
• a logic unit for each column, each logic unit comprising at least one input terminal connected to a respective source line, for receiving an input value called a column value, the logic unit being suitable for performing a logic operation which toggles between a low value and a high value depending on a comparison of the column value with a toggle threshold value, during the computation operation, the logic unit forming a logic inverter during the computation operation, and
• a modification unit suitable for modifying, for at least one logic unit and according to the desired computation operation, a difference between the column value and the toggle threshold value.