G11C 2013/0047
Read destroying or disturbing the data
Official title: {Read destroying or disturbing the data}
G11C2013/0047 (Read destroying or disturbing the data) appears on 61 US grants and 63 published applications in this corpus.
Search patents in G11C- Granted patents
- 61
- Published applications
- 63
- Assignees
- 31
- Inventors
- 104
- Latest grant
- 3 Jun 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 1 |
| 2004 | 0 | 1 |
| 2005 | 1 | 4 |
| 2006 | 2 | 4 |
| 2007 | 3 | 0 |
| 2008 | 3 | 4 |
| 2009 | 0 | 2 |
| 2010 | 3 | 3 |
| 2011 | 1 | 1 |
| 2012 | 2 | 2 |
| 2013 | 3 | 1 |
| 2014 | 3 | 7 |
| 2015 | 3 | 5 |
| 2016 | 9 | 7 |
| 2017 | 3 | 4 |
| 2018 | 6 | 4 |
| 2019 | 4 | 3 |
| 2020 | 3 | 0 |
| 2021 | 4 | 4 |
| 2022 | 4 | 1 |
| 2023 | 0 | 2 |
| 2024 | 2 | 2 |
| 2025 | 1 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Apparatus with multi-bit cell read mechanism and methods for operating the same3 Jun 2025US 12,322,447 B2Micron Technology, Inc.
- Mixed current-forced read scheme for MRAM array with selector7 May 2024US 11,978,491 B2SanDisk Technologies LLC
- Neural network memory5 Mar 2024US 11,922,056 B2Micron Technology, Inc.
- Neural network memory1 Nov 2022US 11,487,464 B2Micron Technology, Inc.
- Mitigating write disturbance errors of phase-change memory module4 Oct 2022US 11,462,266 B1Foundation for Research and Business, Seoul National University of Science and Technology
- Apparatus with multi-bit cell read mechanism and methods for operating the same28 Aug 2025US 2025/0273272 A1Micron Technology, Inc.
- Apparatus with multi-bit cell read mechanism and methods for operating the same11 Jul 2024US 2024/0233828 A9Micron Technology, Inc.
- Apparatus with multi-bit cell read mechanism and methods for operating the same25 Apr 2024US 2024/0135996 A1Micron Technology, Inc.
- Mixed current-forced read scheme for reram array with selector30 Mar 2023US 2023/0100600 A1SanDisk Technologies LLC
- Neural network memory23 Feb 2023US 2023/0058092 A1Micron Technology, Inc.
Most cited
By later US patents
- Programmable structure, an array including the structure, and methods of forming the same155US 7,169,635 B2Axon Technologies Corporation · 2007
- Programmable structure, an array including the structure, and methods of forming the same82US 6,927,411 B2Axon Technologies Corporation · 2005
- State determination in resistance variable memory81US 9,019,754 B1Micron Technology, Inc. · 2015
- Method and apparatus for reading/writing data in a memory system including programmable resistors68US 5,883,827 AMicron Technology, Inc. · 1999
- Programmable structure including an oxide electrolyte and method of forming programmable structure58US 7,101,728 B2Axon Technologies Corporation · 2006