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US 11,462,266 B1Granted
Mitigating write disturbance errors of phase-change memory module
AssigneesSeoul National University R&Db Foundation, Foundation for Research and Business, Seoul National University of Science and Technology
InventorsHyun Kim, Hyo Keun Lee, Seung Yong Lee, Hyuk Jae Lee
Life of this patent
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Abstract
Provided is a phase-change memory (PCM) module including a PCM device including a bit line and a word line, a memory controller configured to output a command related to an operation of the PCM device, and an interference mitigation part located between the memory controller and the PCM device and configured to perform a rewrite operation on the basis of a state transition characteristic of the command output from the memory controller.
Claims10
A phase-change memory module comprising:
- a phase-change memory device including a bit line and a word line;
- a memory controller configured to output a command related to an operation of the phase-change memory device;
- and
- an interference mitigation part located between the memory controller and the phase-change memory device and configured to perform a rewrite operation on the basis of a state transition characteristic of the command output from the memory controller.
1 more element
Dependencies are inferred from the claim text.