G11C 2013/0052
Read process characterized by the shape
Official title: {Read process characterized by the shape, e.g. form, length, amplitude of the read pulse}
G11C2013/0052 (Read process characterized by the shape) appears on 171 US grants and 177 published applications in this corpus.
Search patents in G11C- Granted patents
- 171
- Published applications
- 177
- Assignees
- 48
- Inventors
- 244
- Latest grant
- 16 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2008 | 1 | 4 |
| 2009 | 0 | 6 |
| 2010 | 2 | 2 |
| 2011 | 4 | 7 |
| 2012 | 6 | 2 |
| 2013 | 5 | 0 |
| 2014 | 8 | 16 |
| 2015 | 9 | 10 |
| 2016 | 12 | 15 |
| 2017 | 13 | 11 |
| 2018 | 17 | 13 |
| 2019 | 16 | 19 |
| 2020 | 13 | 9 |
| 2021 | 14 | 16 |
| 2022 | 17 | 18 |
| 2023 | 11 | 10 |
| 2024 | 12 | 10 |
| 2025 | 10 | 4 |
| 2026 | 1 | 5 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Temporal kernel devices, temporal kernel computing systems, and methods of their operation16 Jun 2026US 12,660,205 B2Seoul National University R&Db Foundation
- Reducing disturbance in crossbar array circuits18 Nov 2025US 12,475,947 B2TetraMem Inc.
- Varying-polarity read operations for polarity-written memory cells29 Jul 2025US 12,374,393 B2Micron Technology, Inc.
- Apparatus with multi-bit cell read mechanism and methods for operating the same3 Jun 2025US 12,322,447 B2Micron Technology, Inc.
- Performing sense operations in memory29 Apr 2025US 12,288,592 B2Micron Technology, Inc.
- Memory device and operating method of the memory device9 Jul 2026US 2026/0196265 A1SK hynix Inc.
- Performing sense operations in memory11 Jun 2026US 2026/0162750 A1Micron Technology, Inc.
- Reducing disturbance in crossbar array circuits12 Mar 2026US 2026/0073981 A1TetraMem Inc.
- Varying-polarity read operations for polarity-written memory cells8 Jan 2026US 2026/0011364 A1Micron Technology, Inc.
- Apparatus and methods for reference read techniques for threshold selector device memory1 Jan 2026US 2026/0004846 A1SanDisk Technologies LLC
Most cited
By later US patents
- Phase change memory devices and read methods using elapsed time-based read voltages36US 7,969,798 B2Samsung Electronics Co., Ltd. · 2011
- High operating speed resistive random access memory33US 8,619,459 B1Crossbar, Inc. · 2013
- Techniques to access a self-selecting memory device25US 10,381,075 B2Micron Technology, Inc. · 2019
- Phase change memory devices and systems having reduced voltage threshold drift and associated methods25US 9,627,055 B1Intel Corporation · 2017
- Apparatuses and methods including memory and operation of same22US 10,134,470 B2Micron Technology, Inc. · 2018