Varying-polarity read operations for polarity-written memory cells
AssigneeMicron Technology, Inc.
InventorsInnocenzo Tortorelli, Hari Giduturi, Fabio Pellizzer
Life of this patent
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Abstract
Methods, systems, and devices for varying-polarity read operations for polarity-written memory cells are described. Memory cells may be programmed to store different logic values based on applying write voltages of different polarities to the memory cells. A memory device may read the logic values based on applying read voltages to the memory cells, and the polarity of the read voltages may vary such that at least some read voltages have one polarity and at least some read voltages have another polarity. The read voltage polarity may vary randomly or according to a pattern and may be controlled by the memory device or by a host device for the memory device.
Claims17
A method, comprising:
- storing, at a memory device, a plurality of logic values at a plurality of memory cells;
- receiving one or more read commands;
- applying, based at least in part on the one or more read commands, read pulses to the plurality of memory cells, wherein:
- a first subset of the read pulses, each having a first polarity, is applied to a first subset of memory cells of the plurality of memory cells;
- and
- a second subset of the read pulses, each having a second polarity, is applied to a second subset of memory cells of the plurality of memory cells;
- inverting, based at least in part on the first polarity being different than a default polarity, a first subset of logic values sensed from the first subset of memory cells using the first subset of the read pulses;
- and
- transmitting, based at least in part applying the read pulses, signaling that indicates the inverted first subset of logic values and a second subset of un-inverted logic values sensed from the second subset of memory cells using the second subset of the read pulses.
A memory system, comprising:
- one or more memory devices;
- and
- one or more controllers coupled with the one or more memory devices and configured to cause the memory system to:
- store, at the one or more memory devices, a plurality of logic values at a plurality of memory cells;
- receive one or more read commands;
- apply, based at least in part on the one or more read commands, read pulses to the plurality of memory cells, wherein:
- a first subset of the read pulses, each having a first polarity, is applied to a first subset of memory cells of the plurality of memory cells;
- and
- a second subset of the read pulses, each having a second polarity, is applied to a second subset of memory cells of the plurality of memory cells;
- invert, based at least in part on the first polarity being different than a default polarity, a first subset of logic values sensed from the first subset of memory cells using the first subset of the read pulses;
- and
- transmit, based at least in part applying the read pulses, signaling that indicates the inverted first subset of logic values and a second subset of un-inverted logic values sensed from the second subset of memory cells using the second subset of the read pulses.
A non-transitory computer-readable medium storing code comprising instructions which, when executed by processing circuitry of an electronic device, cause the electronic device to:
- store a plurality of logic values at a plurality of memory cells;
- receive one or more read commands;
- apply, based at least in part on the one or more read commands, read pulses to the plurality of memory cells, wherein:
- a first subset of the read pulses, each having a first polarity, is applied to a first subset of memory cells of the plurality of memory cells;
- and
- a second subset of the read pulses, each having a second polarity, is applied to a second subset of memory cells of the plurality of memory cells;
- and
- transmit, based at least in part applying the read pulses, signaling that indicates a first subset of inverted logic values and a second subset of un-inverted logic values sensed from the second subset of memory cells using the second subset of the read pulses.
Dependencies are inferred from the claim text.