Performing sense operations in memory

A method of operating memory, comprising;

• performing a sense operation on a group of memory cells, wherein performing the sense operation includes:
• performing a first sense operation in a first polarity on the group of memory cells, wherein performing the first sense operation on the group of memory cells comprises executing a forward looking algorithm;
• determining a quantity of the memory cells of the group that snap back during the first sense operation;
• and
• performing a second sense operation in a second polarity on the group of memory cells to determine a data state of the memory cells of the group, wherein:
• performing the second sense operation on the group of memory cells comprises executing a counter-based algorithm;
• the second polarity is opposite the first polarity;
• and
• the second sense operation is a count-based sense operation that uses the determined quantity of memory cells that snap back as a counting threshold to determine the data state of the memory cells of the group.

An apparatus, comprising:

• a memory having a group of memory cells;
• and
• circuitry configured to:
• program data to the group of memory cells, wherein:
• the data programmed to the group of memory cells is balanced between a first data state and a second data state;
• the data programmed to the group of memory cells includes data programmed to a third data state;
• and
• a quantity of the memory cells of the group programmed to the third data state is less than a quantity of the memory cells of the group programmed to the first data state and a quantity of the memory cells of the group programmed to the second data state;
• and
• perform a sense operation on the group of memory cells, wherein performing the sense operation includes:
• performing a first sense operation in a first polarity on the group of memory cells;
• and
• performing a second sense operation in a second polarity on the group of memory cells to determine a data state of the memory cells of the group, wherein:
• the second polarity is opposite the first polarity;
• and
• the second sense operation is a count-based sense operation that uses the quantity of the memory cells of the group programmed to the first data state or the quantity of the memory cells of the group programmed to the second data state as a counting threshold to determine the data state of the memory cells of the group.

A method of operating memory, comprising:

• programming data to a group of memory cells, wherein programming the data includes balancing the data programmed to the group of memory cells between a first data state and a second data state;
• and
• performing a sense operation on the group of memory cells to determine an average threshold voltage of the memory cells of the group, wherein performing the sense operation includes:
• performing a first sense operation in a first polarity on the group of memory cells;
• and
• performing a second sense operation in a second polarity on the group of memory cells to determine a data state of the memory cells of the group, wherein:
• the second polarity is opposite the first polarity;
• the second sense operation is a count-based sense operation that uses a quantity of the memory cells of the group programmed to the first data state or a quantity of the memory cells of the group programmed to the second data state as a counting threshold to determine the data state of the memory cells of the group;
• and
• the second sense operation uses the determined average threshold voltage as a reference voltage to determine the data state of the memory cells of the group.