Techniques to access a self-selecting memory device

A method, comprising:

• determining a desired logic state of a self-selecting memory cell, the desired logic state representing one or more bits of data, wherein the self-selecting memory cell comprises a chalcogenide alloy wherein a first side of the chalcogenide alloy interfaces with a first electrode and a second side of the chalcogenide alloy interfaces with a second electrode;
• determining a threshold voltage of the self-selecting memory cell that corresponds to the desired logic state of the self-selecting memory cell;
• determining a shape of a programming pulse having a single polarity in order to obtain the threshold voltage of the self-selecting memory cell;
• and
• applying the programming pulse to the self-selecting memory cell based at least in part on determining the shape of the programming pulse, wherein applying the programming pulse to the self-selecting memory cell comprises producing an asymmetric spatial distribution of at least one constituent of the chalcogenide alloy between the first side of the chalcogenide alloy and the second side of the chalcogenide alloy.