G11C 2013/0054
Read is performed on a reference element
Official title: {Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell}
G11C2013/0054 (Read is performed on a reference element) appears on 1,044 US grants and 1,090 published applications in this corpus.
Search patents in G11C- Granted patents
- 1,044
- Published applications
- 1,090
- Assignees
- 190
- Inventors
- 1,140
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 1 |
| 2003 | 5 | 7 |
| 2004 | 8 | 12 |
| 2005 | 9 | 21 |
| 2006 | 18 | 28 |
| 2007 | 17 | 21 |
| 2008 | 25 | 53 |
| 2009 | 31 | 54 |
| 2010 | 43 | 55 |
| 2011 | 53 | 46 |
| 2012 | 52 | 29 |
| 2013 | 37 | 33 |
| 2014 | 40 | 72 |
| 2015 | 72 | 79 |
| 2016 | 85 | 73 |
| 2017 | 88 | 70 |
| 2018 | 66 | 69 |
| 2019 | 80 | 70 |
| 2020 | 89 | 65 |
| 2021 | 57 | 52 |
| 2022 | 46 | 40 |
| 2023 | 30 | 41 |
| 2024 | 42 | 41 |
| 2025 | 30 | 29 |
| 2026 | 19 | 29 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- System and method applied with computing-in-memory6 Oct 2026US 12,755,783 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Structure for multiple sense amplifiers of memory device29 Sep 2026US 12,749,529 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Cascade model for determining read level voltage offsets based on wordline group memory cells29 Sep 2026US 12,749,541 B2Micron Technology, Inc.
- Method for reading a multi-level non-volatile memory device, in particular a phase-change memory device, and multi-level non-volatile memory device22 Sep 2026US 12,744,084 B2STMicroelectronics International N. V.
- Semiconductor device and operating method of the semiconductor device25 Aug 2026US 12,718,856 B2SK hynix Inc.
- Random code generator, fabricating method thereof and device applying the same8 Oct 2026US 2026/0311758 A1United Microelectronics Corp.
- Segmented reference for tracking column loading8 Oct 2026US 2026/0311759 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor storage device13 Aug 2026US 2026/0237433 A1Kioxia Corporation
- Memory device and operating method thereof16 Jul 2026US 2026/0204305 A1Samsung Electronics Co., Ltd.
- Read circuit of memory2 Jul 2026US 2026/0188371 A1Zhejiang Hikstor Technology Co., Ltd.
Most cited
By later US patents
- Programmable resistance memory arrays with reference cells317US 6,314,014 B1Ovonyx, Inc. · 2001
- Memory device and method of operating same247US 6,937,507 B2Silicon Storage Technology, Inc. · 2005
- Method for reading a structural phase-change memory204US 6,707,712 B2Intel Corporation · 2004
- Method for reading a structural phase-change memory193US 6,590,807 B2Intel Corporation · 2003
- Semiconductor memory device capable of compensating for leakage current131US 7,248,494 B2Samsung Electronics Co., Ltd. · 2007