Method for reading a structural phase-change memory
AssigneeIntel Corporation
InventorTyler A. Lowery
Life of this patent
Estimating the term…
Abstract
A cell in a structural phase-change memory is programmed by raising cell voltage and cell current to programming threshold levels, and then lowering these to quiescent levels below their programming levels. A precharge pulse is then applied which raises the bitline voltage of the selected cell and does not raise the cell voltage and cell current to their programming levels. Then, the cell current is raised to a read level which is below the programming threshold level, and the bitline voltage is compared to a reference voltage while the cell current is at the read level.
Claims26
An integrated circuit comprising:
- means for storing information in a programmable manner by a structural phase change material;
- means for accessing the storage means;
- means for precharging the access means without changing the information stored by the storage means so that the access means is charged from a quiescent voltage level to a level below a programming threshold;
- means for causing a read current in the storage means;
- and
- means for timing the precharge means and the read current causing means so that the access means is charged immediately prior to the read current being caused.
A method, comprising:
- applying a precharge signal to a bitline coupled to a phase-change memory cell prior to reading of the phase-change memory cell, wherein the level of the precharge signal is less than a programming threshold level of the phase-change memory cell;
- and
- while applying the precharge signal, isolating an input terminal of a sense amplifier from the bitline for a predetermined time interval.
An article comprising a storage medium having stored thereon instructions, that, when executed by a computing platform, result in:
- applying a precharge signal to a bitline coupled to a phase-change memory cell prior to reading of the phase-change memory cell, wherein the level of the precharge signal is less than a programming threshold level of the phase-change memory cell;
- and
- while applying the precharge signal, isolating an input terminal of a sense amplifier from the bitline for a predetermined time interval.
An apparatus, comprising:
- a circuit to apply a precharge signal to a bitline coupled to a phase-change material prior to reading of the phase-change material, wherein the level of the precharge signal is less than a programming threshold level of the phase-change material;
- and
- a sense amplifier having an input adapted to be selectively isolated from the bitline for a predetermined time interval while applying the precharge signal.
An apparatus, comprising:
- a phase-change material;
- a heating element coupled to the phase-change material;
- and
- a circuit to apply a precharge signal to phase-change material prior to reading of the phase-change material, wherein the level of the precharge signal is less than a programming threshold level of the phase-change material.
A system, comprising:
- a processor;
- an antenna coupled to the processor;
- a phase-change memory cell coupled to the processor, the phase-change memory cell comprising:
- a phase-change material;
- a heating element coupled to the phase-change material;
- and
- a circuit to apply a precharge signal to phase-change material prior to reading of the phase-change material, wherein the level of the precharge signal is less than a programming threshold level of the phase-change material.
Dependencies are inferred from the claim text.