Back to results
US 12,749,541 B2Granted
Cascade model for determining read level voltage offsets based on wordline group memory cells
AssigneeMicron Technology, Inc.
InventorsLi-Te Chang, Charles S. Kwong, Murong Lang, Zhenming Zhou
Life of this patent
Estimating the term…
Abstract
Various embodiments use a cascade model to determine (e.g., predict or estimate) one or more read level voltage offsets used to read data from one or more memory cells of a memory device, which can be part of a memory sub-system.
Claims20
A system comprising:
- a memory device comprising a plurality of wordline groups, each of the plurality of wordline groups comprising memory cells;
- and
- a memory controller operatively coupled to the memory device, the memory controller performing operations comprising:
- determining a select read level voltage offset for a select read level voltage used to read data from memory cells of a select wordline group of the plurality of wordline groups;
- determining, by a wordline group machine-learning model, a plurality of predicted select read level voltage offsets for the select read level voltage used to read data from memory cells of other wordline groups of the plurality of wordline groups, each of the plurality of predicted select read level voltage offsets being determined based on the select read level voltage offset;
- based on the plurality of predicted select read level voltage offsets and the select read level voltage offset, determining, by a plurality of read level machine-learning models stacked in a cascade structure, a plurality of predicted other read level voltage offsets for other read level voltages used to read data from memory cells of at least one wordline group of the plurality of wordline groups, each of the plurality of read level machine-learning models:
- receiving, as input, a respective one of the plurality of predicted select read level voltage offsets output by the wordline group machine-learning model;
- and
- determining a set of predicted read level voltage offsets for a respective wordline group of the plurality of wordline groups;
- and
- updating, based on the plurality of predicted select read level voltage offsets and the plurality of predicted other read level voltage offsets, a look-up table that comprises a set of read level voltage offsets used with one or more read level voltages to read data from one or more memory cells of the plurality of wordline groups.
8 more elements
A method comprising:
- determining a select read level voltage offset for a select read level voltage used to read data from memory cells of a select wordline group of a plurality of wordline groups of a memory device;
- determining, by a wordline group machine-learning model, a plurality of predicted select read level voltage offsets for the select read level voltage used to read data from memory cells of other wordline groups of the plurality of wordline groups, each of the plurality of predicted select read level voltage offsets being determined based on the select read level voltage offset;
- based on the plurality of predicted select read level voltage offsets and the select read level voltage offset, determining, by a plurality of read level machine-learning models stacked in a cascade structure, a plurality of predicted other read level voltage offsets for other read level voltages used to read data from memory cells of at least one wordline group of the plurality of wordline groups, each of the plurality of read level machine-learning models:
- receiving, as input, a respective one of the plurality of predicted select read level voltage offsets output by the wordline group machine-learning model;
- and
- determining a set of predicted read level voltage offsets for a respective wordline group of the plurality of wordline groups;
- and
- updating, based on the plurality of select predicted read level voltage offsets and the plurality of predicted other read level voltage offsets, a look-up table that comprises a set of read level voltage offsets used with one or more read level voltages to read data from one or more memory cells of the plurality of wordline groups.
5 more elements
A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
- determining a select read level voltage offset for a select read level voltage used to read data from memory cells of a select wordline group of a plurality of wordline groups of a memory device;
- determining, by a wordline group machine-learning model, a plurality of predicted select read level voltage offsets for the select read level voltage used to read data from memory cells of other wordline groups of the plurality of wordline groups, each of the plurality of predicted select read level voltage offsets being determined based on the select read level voltage offset;
- based on the plurality of predicted select read level voltage offsets and the select read level voltage offset, determining, by a plurality of read level machine-learning models stacked in a cascade structure, a plurality of predicted other read level voltage offsets for other read level voltages used to read data from memory cells of at least one wordline group of the plurality of wordline groups, each of the plurality of read level machine-learning models:
- receiving, as input, a respective one of the plurality of predicted select read level voltage offsets output by the wordline group machine-learning model;
- and
- determining a set of predicted read level voltage offsets for a respective wordline group of the plurality of wordline groups;
- and
- updating, based on the plurality of select predicted read level voltage offsets and the plurality of predicted other read level voltage offsets, a look-up table that comprises a set of read level voltage offsets used with one or more read level voltages to read data from one or more memory cells of the plurality of wordline groups.
5 more elements
Dependencies are inferred from the claim text.