Semiconductor device and operating method of the semiconductor device
AssigneeSK hynix Inc.
InventorGap Sok Do
Life of this patent
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Abstract
A semiconductor device may include a memory cell that is connected between a bit line and a word line, and a cell threshold voltage sensing circuit configured to provide a first voltage to the memory cell whenever a pulse is activated. The cell threshold voltage sensing circuit may generate a voltage corresponding to a current that flows through the memory cell whenever the pulse is activated, and may generate a threshold voltage sensing result signal by comparing the generated voltage with a reference voltage. The threshold voltage sensing result signal may be used to adjust the first voltage to a level corresponding to a threshold voltage of the memory cell, and the memory cell may be read using the adjusted first voltage to generate random data.
Claims16
A semiconductor device comprising:
- a memory cell connected between a bit line and a word line;
- and
- a cell threshold voltage sensing circuit configured to:
- provide a random-read voltage to the memory cell whenever a pulse is activated,
- generate a voltage corresponding to a current through the memory cell whenever the pulse is activated, and
- produce a threshold voltage sensing result signal by comparing the generated voltage to a reference voltage,
- wherein the pulse is activated a plurality of times during an interval in which the word line is activated.
An operating method of a semiconductor device, comprising:
- providing a first voltage to one of a bit line and a word line whenever a pulse is activated in a random read voltage tuning interval;
- providing a second voltage having a lower voltage level than the first voltage to one of the bit line and the word line;
- generating a current having an amount that is identical with an amount of current that flows through a memory cell that is connected between the bit line and the word line;
- generating a voltage corresponding to the identical amount of current and comparing a voltage level of the voltage with a voltage level of a reference voltage;
- and
- adjusting the voltage level of the first voltage based on a result of the comparison,
- wherein the pulse is activated a plurality of times during an interval in which the word line is activated.
Dependencies are inferred from the claim text.