G11C 2013/005
Read using potential difference applied between cell electrodes
Official title: {Read using potential difference applied between cell electrodes}
G11C2013/005 (Read using potential difference applied between cell electrodes) appears on 188 US grants and 189 published applications in this corpus.
Search patents in G11C- Granted patents
- 188
- Published applications
- 189
- Assignees
- 64
- Inventors
- 312
- Latest grant
- 30 Dec 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2004 | 1 | 1 |
| 2005 | 0 | 0 |
| 2006 | 0 | 1 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 0 | 2 |
| 2010 | 0 | 4 |
| 2011 | 3 | 3 |
| 2012 | 3 | 5 |
| 2013 | 3 | 1 |
| 2014 | 4 | 4 |
| 2015 | 9 | 13 |
| 2016 | 7 | 6 |
| 2017 | 10 | 15 |
| 2018 | 16 | 16 |
| 2019 | 26 | 30 |
| 2020 | 28 | 23 |
| 2021 | 29 | 20 |
| 2022 | 19 | 25 |
| 2023 | 13 | 10 |
| 2024 | 9 | 6 |
| 2025 | 8 | 1 |
| 2026 | 0 | 2 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Technologies for current biasing for three-dimensional crosspoint memory cells30 Dec 2025US 12,512,155 B2Intel Corporation
- Programmable resistive memory element and a method of making the same7 Oct 2025US 12,437,809 B2Cyberswarm, Inc.
- Memory cell, electronic circuit comprising such cells, related programming method and multiplication and accumulation method29 Jul 2025US 12,374,397 B2Centre National De La Recherche Scientifique
- Apparatus with multi-bit cell read mechanism and methods for operating the same3 Jun 2025US 12,322,447 B2Micron Technology, Inc.
- Semiconductor memory4 Mar 2025US 12,243,588 B2SK hynix Inc.
- Memory device26 Mar 2026US 2026/0090282 A1Kioxia Corporation
- Programmable resistive memory element and a method of making the same8 Jan 2026US 2026/0011367 A1Cyberswarm, Inc.
- Apparatus with multi-bit cell read mechanism and methods for operating the same28 Aug 2025US 2025/0273272 A1Micron Technology, Inc.
- Memory circuit comprising electronic cells and a control circuit19 Dec 2024US 2024/0422992 A1STMicroelectronics International N. V.
- Program current controller and sense circuit for cross-point memory devices26 Sep 2024US 2024/0321355 A1Micron Technology, Inc.
Most cited
By later US patents
- Silicon based nanoscale crossbar memory87US 8,071,972 B2The Regents of the University of Michigan · 2011
- Method, system and device for non-volatile memory device operation81US 9,558,819 B1Arm Limited · 2017
- Apparatuses and methods including memory and operation of same22US 10,134,470 B2Micron Technology, Inc. · 2018
- Semiconductor memory device22US 8,406,034 B2Kabushiki Kaisha Toshiba · 2013
- Read operations on multi-bit memory cells in resistive cross point arrays21US 6,754,097 B2Hewlett-Packard Development Company, L. P. · 2004