Memory cell, electronic circuit comprising such cells, related programming method and multiplication and accumulation method

A memory cell, comprising:

• a first main terminal, a second main terminal and an auxiliary terminal;
• M memristor(s) connected between the two main terminals, M being an integer greater than or equal to 1;
• M primary switch(es), each being connected in parallel to a respective memristor;
• and
• a secondary switch connected between the second main terminal and the auxiliary terminal;
• the memory cell being configured to write a respective value to the at least one memristor via the opening of the or each primary switch in parallel with said at least one memristor, closing the or each other possible primary switch, closing the secondary switch and the application of a corresponding programming voltage between the first main terminal and the auxiliary terminal;
• the memory cell being configured to read a respective value in at least one memristor via the opening of the or each primary switch in parallel with said at least one memristor, closing the or each other possible primary switch, opening the secondary switch and measuring a corresponding electric quantity between the two main terminals.