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US 9,558,819 B1Granted
Method, system and device for non-volatile memory device operation
AssigneeArm Limited
InventorsRobert Campbell Aitken, Lucian Shifren
Life of this patent
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Abstract
Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a non-volatile memory device may be placed in any one of multiple memory states in a write operation by controlling a current and a voltage applied to terminals of the non-volatile memory device. For example, a write operation may apply a programming signal across terminals of non-volatile memory device having a particular current and a particular voltage for placing the non-volatile memory device in a particular memory state.
Claims20
A non-volatile memory cell comprising:
- a correlated electron switch (CES) element comprising a correlated electron material (CEM), the CES element being configurable to be in an impedance state based, at least in part, on a screening length of the CEM and responsive to localization properties of electrons in the CEM;
- and
- a conducting element to connect a first terminal of the CES element to a bitline responsive to a voltage signal on a wordline,
- wherein the CES element is responsive to application of a first voltage across the first terminal and a second terminal of the CES element while maintaining a first current through the CES element to place a memory state of the CES element in a first impedance state;
- wherein the CES element is responsive to application of a second voltage between the first terminal and the second terminal while maintaining a second current through the CES element to place the memory state of the CES element in a second impedance state;
- and
- wherein the memory state of the CES element is detectable based, at least in part, on a measured current through the CES element in response to application of a third voltage between the first and second terminals in a read operation.
4 more elements
A method comprising:
- applying a first voltage between a first terminal of a non-volatile memory element and a second terminal of the non-volatile memory element while maintaining a first current between the first and second terminals to place the non-volatile memory element in a first memory state in a first write operation;
- applying a second voltage between the first and second terminals of the non-volatile memory element while maintaining a second current between the first and second terminals to place the non-volatile memory element in a second memory state in a second write operation;
- and
- applying a third voltage between the first terminal and the second terminal in a read operation,
- wherein a magnitude of the second voltage is greater than a magnitude of the first voltage, and wherein a magnitude of the first current is greater than a magnitude of the second current.
2 more elements
Dependencies are inferred from the claim text.