Memory device

A memory device, comprising:

• a memory cell including a first conductive layer, a second conductive layer, a third conductive layer provided between the first conductive layer and the second conductive layer, a switching layer provided between the first conductive layer and the third conductive layer, and a variable resistance layer provided between the third conductive layer and the second conductive layer,
• wherein the switching layer contains an oxide of a first element, and a compound of a second element and a third element, the first element being at least one element selected from a group consisting of silicon (Si), boron (B), germanium (Ge), phosphorus (P), and arsenic (As), the second element being at least one element selected from a group consisting of zinc (Zn), tin (Sn), gallium (Ga), indium (In), and bismuth (Bi), and the third element being at least one element selected from a group consisting of tellurium (Te), sulfur (S), and selenium (Se), and
• a first ratio of a sum of atomic concentrations of the first element and oxygen (O) to a sum of atomic concentrations of the first element, the second element, the third element, and oxygen (O) in the switching layer is equal to or more than 10%.