G11C 2013/0057
Read done in two steps
Official title: {Read done in two steps, e.g. wherein the cell is read twice and one of the two read values serving as a reference value}
G11C2013/0057 (Read done in two steps) appears on 249 US grants and 234 published applications in this corpus.
Search patents in G11C- Granted patents
- 249
- Published applications
- 234
- Assignees
- 62
- Inventors
- 346
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2003 | 2 | 4 |
| 2004 | 3 | 4 |
| 2005 | 4 | 6 |
| 2006 | 4 | 5 |
| 2007 | 4 | 4 |
| 2008 | 4 | 5 |
| 2009 | 3 | 1 |
| 2010 | 7 | 6 |
| 2011 | 6 | 10 |
| 2012 | 5 | 2 |
| 2013 | 4 | 12 |
| 2014 | 8 | 12 |
| 2015 | 19 | 22 |
| 2016 | 25 | 16 |
| 2017 | 27 | 20 |
| 2018 | 20 | 17 |
| 2019 | 24 | 16 |
| 2020 | 12 | 11 |
| 2021 | 17 | 17 |
| 2022 | 15 | 15 |
| 2023 | 11 | 14 |
| 2024 | 13 | 5 |
| 2025 | 9 | 7 |
| 2026 | 3 | 3 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and operating method of the semiconductor device25 Aug 2026US 12,718,856 B2SK hynix Inc.
- Circuit snapback and charge diversion for cross-point arrays4 Aug 2026US 12,700,443 B2SanDisk Technologies LLC
- Memory system and operating method16 Jun 2026US 12,658,254 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device determining target resistance states26 Aug 2025US 12,400,711 B2Kioxia Corporation
- Varying-polarity read operations for polarity-written memory cells29 Jul 2025US 12,374,393 B2Micron Technology, Inc.
- Semiconductor storage device13 Aug 2026US 2026/0237433 A1Kioxia Corporation
- Memory device and operating method of the memory device9 Jul 2026US 2026/0196265 A1SK hynix Inc.
- Varying-polarity read operations for polarity-written memory cells8 Jan 2026US 2026/0011364 A1Micron Technology, Inc.
- Circuit snapback and charge diversion for cross-point arrays25 Dec 2025US 2025/0391455 A1SanDisk Technologies LLC
- Semiconductor device and operating method of the semiconductor device7 Aug 2025US 2025/0252987 A1SK hynix Inc.
Most cited
By later US patents
- Reducing the effects of noise in non-volatile memories through multiple reads113US 6,952,365 B2SanDisk Corporation · 2005
- Reducing the effects of noise in non-volatile memories through multiple reads98US 6,621,739 B2SanDisk Corporation · 2003
- Power-saving reading of magnetic memory devices97US 6,891,768 B2Hewlett-Packard Development Company, L. P. · 2005
- Two-cycle sensing in a two-terminal memory array having leakage current92US 7,372,753 B1Unity Semiconductor Corporation · 2008
- Resistive sense memory calibration for self-reference read method89US 7,898,838 B2Seagate Technology LLC · 2011