G11C 2013/0045
Read using current through the cell
Official title: {Read using current through the cell}
G11C2013/0045 (Read using current through the cell) appears on 589 US grants and 625 published applications in this corpus.
Search patents in G11C- Granted patents
- 589
- Published applications
- 625
- Assignees
- 127
- Inventors
- 860
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2004 | 1 | 2 |
| 2005 | 1 | 0 |
| 2006 | 0 | 2 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 1 | 3 |
| 2010 | 1 | 10 |
| 2011 | 3 | 13 |
| 2012 | 10 | 8 |
| 2013 | 16 | 15 |
| 2014 | 16 | 20 |
| 2015 | 15 | 21 |
| 2016 | 36 | 23 |
| 2017 | 36 | 46 |
| 2018 | 39 | 47 |
| 2019 | 59 | 66 |
| 2020 | 75 | 73 |
| 2021 | 81 | 86 |
| 2022 | 54 | 59 |
| 2023 | 52 | 52 |
| 2024 | 44 | 37 |
| 2025 | 36 | 23 |
| 2026 | 13 | 18 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Structure for multiple sense amplifiers of memory device29 Sep 2026US 12,749,529 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for reading a multi-level non-volatile memory device, in particular a phase-change memory device, and multi-level non-volatile memory device22 Sep 2026US 12,744,084 B2STMicroelectronics International N. V.
- Spike-timing-dependent plasticity using inverse resistivity phase-change material1 Sep 2026US 12,727,396 B2International Business Machines Corporation
- Memory device of the phase-change type and method for reading such a device25 Aug 2026US 12,718,880 B2STMicroelectronics International N. V.
- Resistive memory device18 Aug 2026US 12,713,621 B2Samsung Electronics Co., Ltd.
- In-memory computation device having an analog compensation and method8 Oct 2026US 2026/0311757 A1STMicroelectronics International N. V.
- Memory including variable resistor24 Sep 2026US 2026/0290451 A1SK hynix Inc.
- Memory system and operating method24 Sep 2026US 2026/0290453 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device and operating method of the same17 Sep 2026US 2026/0279481 A1SK hynix Inc.
- Ultra-large scale in-memory computing core circuit for resolving ir-drop issues23 Jul 2026US 2026/0212925 A1Huazhong University of Science and Technology
Most cited
By later US patents
- Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating193US 8,243,499 B2Zeno Semiconductor, Inc. · 2012
- Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating152US 9,087,580 B2Zeno Semiconductor, Inc. · 2015
- Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating135US 9,490,012 B2Zeno Semiconductor, Inc. · 2016
- Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating119US 9,812,203 B2Zeno Semiconductor, Inc. · 2017
- Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating101US 10,032,514 B2Zeno Semiconductor, Inc. · 2018