Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating

A semiconductor memory array comprising:

• a plurality of semiconductor memory cells arranged in a matrix of rows and columns, wherein each said semiconductor memory cell comprises:
• a bipolar device comprising a floating body having a first conductivity type selected from n-type conductivity type and p-type conductivity type and configured to store data when power is applied to said cell;
• a nonvolatile memory comprising a resistance change element configured to store data stored in said bipolar device upon transfer thereto;
• a buried layer region having a second conductivity type selected from said n-type conductivity type and said p-type conductivity type and being different from said first conductivity type;
• and
• a buried layer terminal electrically connected to said buried layer region;
• wherein when a first memory cell of said plurality of semiconductor memory cells is in a first charge level and a second memory cell of said plurality of semiconductor memory cells is in a second charge level, upon said transfer of data, said first memory cell stores a first nonvolatile memory state and second memory cell stores a second nonvolatile memory state, said first and second nonvolatile memory states being non-algorithmically determined by said first and second charge levels of said first and second memory cells, respectively.