Memory system and operating method

A memory system, comprising:

• a memory array, comprising a plurality of cross-point memory cells;
• a control circuit, coupled to the memory array and configured to:
• provide a plurality of read pulses to a selected cross-point memory cell, wherein magnitudes of the read pulses comprising at least two pulses are increased from a magnitude lower than a threshold voltage of the selector of the selected cross-point memory cell to another magnitude between a set voltage used to program the memory element of the selected cross-point memory cell and the threshold voltage of the selected cross-point memory cell;
• and
• a read circuit, coupled to the memory array and configured to:
• receive a plurality of read currents in response to provision of the read pulses.

An operating method of a memory array, the memory array comprising a plurality of cross-point memory cells, the operating method comprising:

• providing, by a control circuit, at least two read pulses with increasing magnitudes to a selected cross-point memory cell;
• and
• receiving, by a read circuit, a read currents flowing through the selected cross-point memory cell, and
• verifying, by the read circuit, whether each of the read pulses successfully reads out data comparing each of the read currents with a target current, the target current being a constant value;
• and
• determine a data value stored in the selected cross-point memory cell by comparing a verified read current with a reference current, different from the target current.