G11C 11/403
With charge regeneration common to a multiplicity of memory cells, i.e. external
Official title: with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
G11C11/403 (With charge regeneration common to a multiplicity of memory cells, i.e. external) appears on 2,138 US grants and 1,838 published applications in this corpus.
Search patents in G11C- Granted patents
- 2,138
- Published applications
- 1,838
- Assignees
- 321
- Inventors
- 1,968
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 19 | 0 |
| 1977 | 36 | 0 |
| 1978 | 38 | 0 |
| 1979 | 25 | 0 |
| 1980 | 29 | 0 |
| 1981 | 14 | 0 |
| 1982 | 12 | 0 |
| 1983 | 19 | 0 |
| 1984 | 15 | 0 |
| 1985 | 17 | 0 |
| 1986 | 11 | 0 |
| 1987 | 15 | 0 |
| 1988 | 9 | 0 |
| 1989 | 11 | 0 |
| 1990 | 11 | 0 |
| 1991 | 16 | 0 |
| 1992 | 9 | 0 |
| 1993 | 7 | 0 |
| 1994 | 15 | 0 |
| 1995 | 18 | 0 |
| 1996 | 18 | 0 |
| 1997 | 17 | 0 |
| 1998 | 26 | 0 |
| 1999 | 30 | 0 |
| 2000 | 29 | 0 |
| 2001 | 31 | 14 |
| 2002 | 45 | 46 |
| 2003 | 37 | 44 |
| 2004 | 49 | 58 |
| 2005 | 51 | 76 |
| 2006 | 53 | 63 |
| 2007 | 46 | 53 |
| 2008 | 47 | 73 |
| 2009 | 42 | 66 |
| 2010 | 64 | 67 |
| 2011 | 62 | 67 |
| 2012 | 52 | 120 |
| 2013 | 85 | 49 |
| 2014 | 94 | 82 |
| 2015 | 76 | 64 |
| 2016 | 79 | 45 |
| 2017 | 81 | 68 |
| 2018 | 62 | 65 |
| 2019 | 68 | 74 |
| 2020 | 79 | 100 |
| 2021 | 94 | 89 |
| 2022 | 66 | 105 |
| 2023 | 81 | 125 |
| 2024 | 105 | 98 |
| 2025 | 86 | 74 |
| 2026 | 37 | 53 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Clock converting circuit with symmetric structure6 Oct 2026US 12,754,585 B2Samsung Electronics Co., Ltd.
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Memory device including in-memory operation circuit and operating method thereof22 Sep 2026US 12,744,071 B2Postech Research and Business Development Foundation
- Memory device including semiconductor element15 Sep 2026US 12,740,044 B2Unisantis Electronics Singapore Pte. Ltd.
- Access circuit and memory cell circuit8 Sep 2026US 12,731,627 B2Macronix International Co., Ltd.
- Structure and method for in-memory logic gates using gain-cell embedded dram (gc-edram)8 Oct 2026US 2026/0311737 A1Technion Research & Development Foundation Limited
- Apparatuses systems and methods for hot electron induced punch-through degradation mitigation1 Oct 2026US 2026/0301790 A1Micron Technology, Inc.
- Data read-write circuit and method therefor, memory and driving method therefor, and electronic device1 Oct 2026US 2026/0301798 A1
- Memory cell having three-dimensional structure, operating method thereof, and memory device1 Oct 2026US 2026/0304733 A1Foundation for Research and Business, Seoul National University of Science and Technology
- Gain cell memory device using enhanced sensing scheme and methods for operating the same10 Sep 2026US 2026/0268957 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Data storage device and refreshing method for use with such device605US 7,170,807 B2Innovative Silicon S.A. · 2007
- Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same426US 7,957,206 B2Micron Technology, Inc. · 2011
- Semiconductor signal processing device422US 8,274,841 B2Renesas Electronics Corporation · 2012
- High speed DRAM architecture with uniform access latency419US 8,503,250 B2Mosaid Technologies Incorporated · 2013
- Semiconductor device and manufacturing method thereof368US 9,780,225 B2Semiconductor Energy Laboratory Co.Ltd. · 2017