G11C 11/404
With one charge-transfer gate
Official title: with one charge-transfer gate, e.g. MOS transistor, per cell
G11C11/404 (With one charge-transfer gate) appears on 1,421 US grants and 1,134 published applications in this corpus.
Search patents in G11C- Granted patents
- 1,421
- Published applications
- 1,134
- Assignees
- 228
- Inventors
- 1,333
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 13 | 0 |
| 1977 | 26 | 0 |
| 1978 | 28 | 0 |
| 1979 | 21 | 0 |
| 1980 | 26 | 0 |
| 1981 | 11 | 0 |
| 1982 | 10 | 0 |
| 1983 | 16 | 0 |
| 1984 | 14 | 0 |
| 1985 | 14 | 0 |
| 1986 | 8 | 0 |
| 1987 | 13 | 0 |
| 1988 | 7 | 0 |
| 1989 | 8 | 0 |
| 1990 | 8 | 0 |
| 1991 | 15 | 0 |
| 1992 | 6 | 0 |
| 1993 | 5 | 0 |
| 1994 | 11 | 0 |
| 1995 | 14 | 0 |
| 1996 | 17 | 0 |
| 1997 | 14 | 0 |
| 1998 | 19 | 0 |
| 1999 | 21 | 0 |
| 2000 | 22 | 0 |
| 2001 | 22 | 11 |
| 2002 | 31 | 36 |
| 2003 | 26 | 20 |
| 2004 | 24 | 39 |
| 2005 | 28 | 39 |
| 2006 | 33 | 45 |
| 2007 | 33 | 39 |
| 2008 | 32 | 49 |
| 2009 | 28 | 52 |
| 2010 | 45 | 53 |
| 2011 | 50 | 45 |
| 2012 | 44 | 73 |
| 2013 | 44 | 30 |
| 2014 | 59 | 46 |
| 2015 | 50 | 45 |
| 2016 | 47 | 27 |
| 2017 | 48 | 45 |
| 2018 | 36 | 40 |
| 2019 | 41 | 43 |
| 2020 | 45 | 62 |
| 2021 | 59 | 56 |
| 2022 | 41 | 60 |
| 2023 | 53 | 81 |
| 2024 | 66 | 58 |
| 2025 | 48 | 22 |
| 2026 | 21 | 18 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Memory device including semiconductor element15 Sep 2026US 12,740,044 B2Unisantis Electronics Singapore Pte. Ltd.
- Integrated memory comprising secondary access devices between digit lines and primary access devices25 Aug 2026US 12,720,721 B2Micron Technology, Inc.
- Integrated circuit device and method of manufacturing the same11 Aug 2026US 12,707,633 B2Samsung Electronics Co., Ltd.
- Memory device with improved driver operation and methods to operate the memory device4 Aug 2026US 12,700,452 B2Micron Technology, Inc.
- 3d semiconductor device and structure with metal layers and a power delivery path13 Aug 2026US 2026/0239658 A1Monolithic 3D Inc.
- Semiconductor memory device30 Jul 2026US 2026/0221182 A1SK hynix Inc.
- Memory device using semiconductor element23 Jul 2026US 2026/0214879 A1Unisantis Electronics Singapore Pte. Ltd.
- Semiconductor memory device9 Jul 2026US 2026/0197990 A1Unisantis Electronics Singapore Pte. Ltd.
- Vertical three-dimensional (3d) dram array with digitline select circuitry2 Jul 2026US 2026/0188379 A1Micron Technology, Inc.
Most cited
By later US patents
- Data storage device and refreshing method for use with such device605US 7,170,807 B2Innovative Silicon S.A. · 2007
- Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same426US 7,957,206 B2Micron Technology, Inc. · 2011
- Method of maintaining the state of semiconductor memory having electrically floating body transistor362US 8,130,547 B2Zeno Semiconductor, Inc. · 2012
- Semiconductor device353US 6,969,662 B22005
- Memory array having a programmable word length, and method of operating same352US 7,492,632 B2Innovative Silicon ISi SA · 2009