US 12,707,633 B2Granted

Integrated circuit device and method of manufacturing the same

AssigneeSamsung Electronics Co., Ltd.

InventorsDongwon Lim, Inseok Baek, Sangbin Ahn, Seokyeong Choi, Seungyong Hong

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Abstract

An integrated circuit device including a first cell block on a substrate that includes a first cell area, a first dummy cell area surrounding the first cell area in a plan view, the first dummy cell area including first active regions and second active regions in an outer periphery of the first dummy cell area, the first active regions each having a first size and the second active regions each having a second size larger than the first size, first and second word lines extending in a first direction and alternating with each other in a second direction, each of the first word lines including a first landing area extending between a second active region and a first active region, the first active region being near and apart from the second active region in the second direction, and first word line contacts on the first landing area may be provided.

Claims20

Dependent claims

An integrated circuit device comprising:

a first cell block on a substrate, the first cell block including,
a first cell area,
a first dummy cell area surrounding the first cell area in a plan view, the first dummy cell area including a plurality of first active regions and a plurality of second active regions in a first outer periphery of the first dummy cell area, the plurality of first active regions each having a first size and the plurality of second active regions each having a second size larger than the first size,
a plurality of first word lines and a plurality of second word lines in the first cell area and the first dummy cell area, the plurality of first word lines and the plurality of second word lines extending in a first horizontal direction and alternating with each other in a second horizontal direction, each of the plurality of first word lines including a first landing area extending between a first-second active region among the plurality of second active regions and a first-first active region among the plurality of first active regions, the first-first active region being near and spaced apart from the first-second active region in the second horizontal direction, and
a plurality of first word line contacts in the first dummy cell area, each of the plurality of first word line contacts being on the first landing area of a first corresponding one of the plurality of first word lines.

2 more elements

An integrated circuit device comprising:

a cell area on a substrate;
a dummy cell area on the substrate and including a first portion on a first side of the cell area and a second portion on a second side of the cell area;
a plurality of first word lines and a plurality of second word lines in the cell area and the dummy cell area, the plurality of first word lines and the plurality of second word lines extending in a first horizontal direction and alternating with each other in a second horizontal direction;
a plurality of first word line contacts in the first portion of the dummy cell area, the plurality of first word line contacts being on the plurality of first word lines, respectively;
a plurality of second word line contacts in the second portion of the dummy cell area, the plurality of second word line contacts being on the plurality of second word lines, respectively;
and
a plurality of active regions in the dummy cell area,
wherein a first number of the plurality of active regions arranged in the first horizontal direction in the first portion of the dummy cell area is different from a second number of the plurality of active regions arranged in the first horizontal direction in the second portion of the dummy cell area.

5 more elements

An integrated circuit device comprising:

a cell area on a substrate;
a dummy cell area on the substrate, the dummy cell area including a first portion on a first side of the cell area and a second portion on a second side of the cell area;
a plurality of first word lines and a plurality of second word lines in the cell area and the dummy cell area, the plurality of first word lines and the plurality of second word lines extending in a first horizontal direction and alternating with each other in a second horizontal direction;
a plurality of first word line contacts in the first portion of the dummy cell area, the plurality of first word line contacts being on the plurality of first word lines, respectively;
a plurality of second word line contacts in the second portion of the dummy cell area, the plurality of second word line contacts being on the plurality of second word lines, respectively;
a first word line driver circuit unit near the first portion of the dummy cell area and electrically connected to the plurality of first word line contacts;
and
a second word line driver circuit unit near the second portion of the dummy cell area and electrically connected to the plurality of second word line contacts,
a plurality of active regions in the dummy cell area,
wherein a first number of the plurality of active regions arranged in the first horizontal direction in the first portion of the dummy cell area is 2n, and a second number of the plurality of active regions arranged in the first horizontal direction in the second portion of the dummy cell area is 2n+1, where n is a positive integer.

7 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/466,357Filed 13 Sep 2023
Priority: KR 10-2022-012196926 Sep 2022
Published: US 2024/0107753 A128 Mar 2024
Granted: 11 Aug 2026
Term ends: Not estimatedThe source records don’t support an estimate.

Classification9 codes

H10B 12/053
Making the transistor: the transistor being at least partially in a trench in the substrate
H10B 12/488
Data lines or contacts therefor: word lines
G11C 5/025
Disposition of storage elements, e.g. in the form of a matrix array: geometric lay-out considerations of storage- and peripheral-blocks in a…
G11C 8/14
Arrangements for selecting an address in a digital store: word line organisation; Word line lay-out