G11C 11/1657
Word-line or row circuits
Official title: {Word-line or row circuits}
G11C11/1657 (Word-line or row circuits) appears on 944 US grants and 1,007 published applications in this corpus.
Search patents in G11C- Granted patents
- 944
- Published applications
- 1,007
- Assignees
- 172
- Inventors
- 1,279
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 2 | 0 |
| 1999 | 3 | 0 |
| 2000 | 2 | 0 |
| 2001 | 2 | 3 |
| 2002 | 16 | 16 |
| 2003 | 17 | 41 |
| 2004 | 26 | 20 |
| 2005 | 26 | 29 |
| 2006 | 22 | 18 |
| 2007 | 9 | 12 |
| 2008 | 18 | 20 |
| 2009 | 20 | 39 |
| 2010 | 25 | 31 |
| 2011 | 26 | 26 |
| 2012 | 23 | 17 |
| 2013 | 26 | 23 |
| 2014 | 31 | 26 |
| 2015 | 24 | 34 |
| 2016 | 39 | 34 |
| 2017 | 44 | 43 |
| 2018 | 47 | 34 |
| 2019 | 55 | 77 |
| 2020 | 85 | 99 |
| 2021 | 88 | 76 |
| 2022 | 68 | 92 |
| 2023 | 57 | 63 |
| 2024 | 67 | 39 |
| 2025 | 51 | 62 |
| 2026 | 22 | 33 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Multilevel antiferromagnetic memory device29 Sep 2026US 12,749,519 B2Kioxia Corporation
- Bipolar decoders for nonvolatile memory with spike attenuation for threshold selector switches29 Sep 2026US 12,749,520 B2SanDisk Technologies LLC
- Magnetic memory device having magnetic tunnel junction patterns and spin-orbit torque lines22 Sep 2026US 12,744,068 B2Samsung Electronics Co., Ltd.
- Bipolar decoders for nonvolatile memory1 Sep 2026US 12,725,645 B2SanDisk Technologies LLC
- Apparatus and methods for decoder modules for non-volatile memory25 Aug 2026US 12,718,859 B2SanDisk Tehnologies LLC
- Memory device and operating method of the memory device17 Sep 2026US 2026/0279423 A1Samsung Electronics Co., Ltd.
- Magnetic memory cell based on stt-assisted sot writing comprising an n-type transistor and a p-type transistor as select transistors, and mram memory20 Aug 2026US 2026/0247870 A1Centre National De La Recherche Scientifique
- Semiconductor storage device13 Aug 2026US 2026/0237433 A1Kioxia Corporation
- Cross-point array leakage compensation6 Aug 2026US 2026/0229265 A1SanDisk Technologies LLC
- Storage device6 Aug 2026US 2026/0229286 A1Sony Semiconductor Solutions Corporation
Most cited
By later US patents
- Method and system for providing a magnetic memory structure utilizing spin transfer142US 7,345,912 B2Grandis, Inc. · 2008
- Segmented write line architecture for writing magnetic random access memories109US 6,335,890 B12002
- Magnetic random access memory and method of manufacturing the same101US 7,920,412 B2Kabushiki Kaisha Toshiba · 2011
- Magnetoresistive random access memory with shared word and digit lines100US 5,946,227 AMotorola, Inc. · 1999
- Memory device array having a pair of magnetic bits sharing a common conductor line97US 6,778,421 B2Hewlett-Packard Development Company, L. P. · 2004