G11C 11/1653
Address circuits or decoders
Official title: {Address circuits or decoders}
G11C11/1653 (Address circuits or decoders) appears on 1,695 US grants and 1,774 published applications in this corpus.
Search patents in G11C- Granted patents
- 1,695
- Published applications
- 1,774
- Assignees
- 255
- Inventors
- 1,954
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 3 | 0 |
| 1999 | 9 | 0 |
| 2000 | 7 | 0 |
| 2001 | 4 | 5 |
| 2002 | 21 | 19 |
| 2003 | 33 | 68 |
| 2004 | 45 | 37 |
| 2005 | 42 | 47 |
| 2006 | 34 | 28 |
| 2007 | 23 | 18 |
| 2008 | 24 | 28 |
| 2009 | 25 | 58 |
| 2010 | 35 | 59 |
| 2011 | 49 | 49 |
| 2012 | 43 | 42 |
| 2013 | 52 | 60 |
| 2014 | 77 | 80 |
| 2015 | 81 | 93 |
| 2016 | 97 | 91 |
| 2017 | 101 | 82 |
| 2018 | 88 | 84 |
| 2019 | 111 | 127 |
| 2020 | 143 | 143 |
| 2021 | 126 | 112 |
| 2022 | 103 | 129 |
| 2023 | 87 | 105 |
| 2024 | 97 | 72 |
| 2025 | 85 | 91 |
| 2026 | 46 | 47 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Multilevel antiferromagnetic memory device29 Sep 2026US 12,749,519 B2Kioxia Corporation
- Bipolar decoders for nonvolatile memory with spike attenuation for threshold selector switches29 Sep 2026US 12,749,520 B2SanDisk Technologies LLC
- Magnetic memory device having magnetic tunnel junction patterns and spin-orbit torque lines22 Sep 2026US 12,744,068 B2Samsung Electronics Co., Ltd.
- Electronic device with memory to write with and without verification22 Sep 2026US 12,744,069 B2Sony Semiconductor Solutions Corporation
- Bipolar decoders for nonvolatile memory1 Sep 2026US 12,725,645 B2SanDisk Technologies LLC
- Midpoint sensing reference generation for stt-mram1 Oct 2026US 2026/0301788 A1Everspin Technologies, Inc.
- Memory device and operating method of the memory device17 Sep 2026US 2026/0279423 A1Samsung Electronics Co., Ltd.
- Magnetic memory cell based on stt-assisted sot writing comprising an n-type transistor and a p-type transistor as select transistors, and mram memory20 Aug 2026US 2026/0247870 A1Centre National De La Recherche Scientifique
- Adaptive memory management and control circuitry13 Aug 2026US 2026/0237432 A1Numem Inc.
- Semiconductor storage device13 Aug 2026US 2026/0237433 A1Kioxia Corporation
Most cited
By later US patents
- Magnetic memory array using magnetic tunnel junction devices in the memory cells768US 5,640,343 AInternational Business Machines Corporation · 1997
- Read circuit for magnetic memory array using magnetic tunnel junction devices214US 5,793,697 AInternational Business Machines Corporation · 1998
- Quantum random address memory with magnetic readout and/or nano-memory elements158US 6,016,269 AMotorola, Inc. · 2000
- Method and system for providing a magnetic memory structure utilizing spin transfer142US 7,345,912 B2Grandis, Inc. · 2008
- Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells141US 7,286,395 B2Grandis, Inc. · 2007