Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells

A magnetic memory comprising:

• a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including a magnetic element and an selection device, the magnetic element being configured to be programmed to a high resistance state by a first write current driven through the magnetic element in a first direction and being programmed to a low resistance state by a second write current driven through the magnetic element in a second direction opposite to the first direction, the first write current and the second write current programming the magnetic element via spin transfer;
• a plurality of bit lines, each of the plurality of bit lines corresponding to a first portion of the plurality of magnetic storage cells;
• a plurality of source lines, each of the plurality of source lines corresponding to a second portion of the plurality of magnetic storage cells;
• and
• a plurality of word lines, each of the plurality of word lines corresponding to a magnetic storage cell of the plurality of magnetic storage cells and for allowing current to flow through the magnetic storage cell;
• wherein the plurality of bit lines and the plurality of source lines are configured to drive the first write current through the magnetic element in the first direction, to drive the second write current through the magnetic element in the second direction, and to drive at least one read current through the magnetic element in the second direction.

A method for utilizing at least one magnetic memory cell in a memory, each of the at least one magnetic memory cell including a magnetic element capable of being programmed using spin transfer, the method comprising:

• programming the at least one memory cell to a high resistance state or a low resistance state including programming the high resistance state by driving a first write current through the magnetic element in a first direction or programming the low resistance state by driving a second write current driven through the magnetic element in a second direction, the first write current and the second write current programming the magnetic element via spin transfer;
• and
• reading the at least one magnetic memory cell by driving at least one read current through the magnetic element in a third direction that does not destabilize the low resistance states;
• wherein the second direction and the third direction are the same.