Method and system for providing a magnetic memory structure utilizing spin transfer

A magnetic memory comprising:

• a plurality of magnetic memory cells, each of the plurality of magnetic memory cells including a magnetic element and a transistor connected with the magnetic element, the magnetic element being programmed by a first write current driven through the magnetic element in a first direction and a second write current driven through the magnetic element in a second direction, the transistor having a source, a drain, and a gate, the drain being connected with the magnetic element;
• a plurality of local word lines connected with the gate of the transistor of a first portion of the plurality of magnetic memory cells, each of the local word lines including polysilicon and having a first resistivity;
• a plurality of global word lines, each of the plurality of global word lines corresponding to a portion of the plurality of local word lines, including metal, and having a second resistivity lower than the first resistivity;
• a plurality of bit lines connected with the magnetic element of each of the plurality of magnetic memory cells;
• a plurality of source lines connected with the transistor of each of the plurality of magnetic storage cells, each of the plurality of source lines corresponding to a second portion of the plurality of magnetic memory cells and carrying the first write current and the second write current, the second portion of the plurality of magnetic memory cells including more than a single magnetic memory cell;
• a write control driver configured to connect each of the plurality of source lines to a voltage during write operations and to ground during a read operation;
• a plurality of pre-charge circuits connected with the plurality of bit lines and for charging at least one selected bit line of the plurality of bit lines to a pre-charge read voltage;
• and
• at least one bit lines selector for selecting the at least one selected bit line.

A method for providing a magnetic memory comprising:

• providing a plurality of magnetic memory cells, each of the plurality of magnetic memory cells including a magnetic element and a selection device connected with the magnetic element, the magnetic element being programmed by a first write current driven through the magnetic element in a first direction and a second write current driven through the magnetic element in a second direction;
• providing a plurality of local word lines connected with the selection device of a first portion of the plurality of magnetic memory cells, each of the local word lines having a first resistivity;
• providing a plurality of global word lines, each of the plurality of global word lines corresponding to a portion of the plurality of local word lines and having a second resistivity lower than the first resistivity;
• providing a plurality of bit lines connected with the magnetic element of each of the plurality of magnetic memory cells;
• and
• providing a plurality of source lines connected with the selection device of each of the plurality of magnetic storage cells, each of the plurality of source lines corresponding to a second portion of the plurality of magnetic memory cells and carrying the first write current and the second write current, the second portion of the plurality of magnetic memory cells including more than a single magnetic memory cell.

A method for utilizing a magnetic memory including a plurality of magnetic memory cells, a plurality of bit lines, and a plurality of reference lines, each of the plurality of magnetic memory cells including a magnetic element and a selection device connected with the magnetic element, the magnetic element being programmed by a first write current driven through the magnetic element in a first direction and a second write current driven through the magnetic element in a second direction, the plurality of bit lines connected with the magnetic element of each of the plurality of magnetic memory cells, the method comprising:

• setting to high at least one of a plurality of local word lines corresponding to at least one desired magnetic memory cell of the plurality of magnetic memory cells, the plurality of local word lines connected with the selection device of a first portion of the plurality of magnetic memory cells, each of the plurality of local word lines having a first resistivity and being coupled to one of a plurality of global word lines, each of the plurality of global word lines corresponding to a portion of the plurality of local word lines and having a second resistivity lower than the first resistivity;
• selecting at least one of the plurality of bit lines corresponding to the at least one desired magnetic memory cell;
• disabling a reference line;
• and
• providing data for the at least one desired memory cell to at least one write control driver connected to the at least one bit line such that current is driven through the at least one bit line, the at least one desired memory cell and at least one source line connected to the desired memory cell such that current is driven through the magnetic element of the at least one desired memory cell in the first direction or the second direction.

A method for utilizing a magnetic memory including a plurality of magnetic memory cells, a plurality of bit lines, and a plurality of reference lines, each of the plurality of magnetic memory cells including a magnetic element and a selection device connected with the magnetic element, the magnetic element being programmed by a first write current driven through the magnetic element in a first direction and a second write current driven through the magnetic element in a second direction, the plurality of bit lines connected with the magnetic element of each of the plurality of magnetic memory cells, the method comprising:

• precharging at least one of the plurality of bit lines corresponding to at least one desired magnetic memory cell;
• setting a source line to ground, the source line corresponding to a portion of the plurality of magnetic memory cells including the at least one desired magnetic memory cell;
• setting to high at least one of a plurality of local word lines corresponding to the at least one desired magnetic memory cell of the plurality of magnetic memory cells, the plurality of local word lines connected with the selection device of a first portion of the plurality of magnetic memory cells, each of the plurality of local word lines having a first resistivity and being coupled to one of a plurality of global word lines, each of the plurality of global word lines corresponding to a portion of the plurality of local word lines and having a second resistivity lower than the first resistivity;
• selecting the at least one of the plurality of bit lines corresponding to the at least one desired magnetic memory cell;
• comparing a read current from the at least one desired magnetic memory cell to a reference signal.